Issued Patents All Time
Showing 126–150 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10361307 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2019-07-23 |
| 10347765 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Zuoguang Liu, Xin Miao, Tenko Yamashita | 2019-07-09 |
| 10332796 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-25 |
| 10326000 | FinFET with reduced parasitic capacitance | Emre Alptekin, Sivananda K. Kanakasabapathy | 2019-06-18 |
| 10325999 | Contact area to trench silicide resistance reduction by high-resistance interface removal | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-18 |
| 10319840 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-06-11 |
| 10319640 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-11 |
| 10312377 | Localized fin width scaling using a hydrogen anneal | Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh | 2019-06-04 |
| 10312318 | Metal-insulator-metal capacitor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-04 |
| 10304941 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-28 |
| 10297689 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-21 |
| 10297614 | Gate top spacer for FinFET | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-05-21 |
| 10297448 | SiGe fins formed on a substrate | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-21 |
| 10290633 | CMOS compatible fuse or resistor using self-aligned contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-14 |
| 10283406 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-07 |
| 10283586 | Capacitors | Kangguo Cheng, Christopher J. Penny, Theodorus E. Standaert, Junli Wang | 2019-05-07 |
| 10276658 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-30 |
| 10269644 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-23 |
| 10256327 | Forming a fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2019-04-09 |
| 10249537 | Method and structure for forming FinFET CMOS with dual doped STI regions | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-02 |
| 10249536 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Kangguo Cheng, Theodorus E. Standaert | 2019-04-02 |
| 10236380 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236359 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236293 | FinFET CMOS with silicon fin N-channel FET and silicon germanium fin P-channel FET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236289 | Approach to fabrication of an on-chip resistor with a field effect transistor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |