Issued Patents All Time
Showing 251–275 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9793274 | CMOS transistors including gate spacers of the same thickness | Kangguo Cheng, Ali Khakifirooz | 2017-10-17 |
| 9786563 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-10 |
| 9780094 | Trench to trench fin short mitigation | Alexander Reznicek | 2017-10-03 |
| 9780091 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-03 |
| 9773783 | Forming metal-insulator-metal capacitor | Kangguo Cheng | 2017-09-26 |
| 9768077 | Low resistance dual liner contacts for Fin Field-Effect Transistors (FinFETs) | Praneet Adusumilli, Zuoguang Liu | 2017-09-19 |
| 9761500 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-09-12 |
| 9761496 | Field effect transistor contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-09-12 |
| 9735246 | Air-gap top spacer and self-aligned metal gate for vertical fets | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-08-15 |
| 9722043 | Self-aligned trench silicide process for preventing gate contact to silicide shorts | Kangguo Cheng | 2017-08-01 |
| 9721885 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2017-08-01 |
| 9716064 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2017-07-25 |
| 9716042 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-07-25 |
| 9711645 | Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-07-18 |
| 9711501 | Interlayer via | Lawrence A. Clevenger, Terence B. Hook, Joshua M. Rubin, Tenko Yamashita | 2017-07-18 |
| 9704993 | Method of preventing epitaxy creeping under the spacer | Kangguo Cheng, Ali Khakifirooz, Sreenivasan Raghavasimhan | 2017-07-11 |
| 9698061 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Huiming Bu, Tenko Yamashita | 2017-07-04 |
| 9698212 | Three-dimensional metal resistor formation | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-07-04 |
| 9698215 | MIM capacitor formation in RMG module | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-07-04 |
| 9691877 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-06-27 |
| 9691763 | Multi-gate FinFET semiconductor device with flexible design width | Tenko Yamashita, Chun-Chen Yeh | 2017-06-27 |
| 9685507 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-06-20 |
| 9685532 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-06-20 |
| 9680020 | Increased contact area for FinFETs | Chung-Hsun Lin, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-06-13 |
| 9666533 | Airgap formation between source/drain contacts and gates | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-05-30 |