Issued Patents All Time
Showing 276–300 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9666726 | Localized fin width scaling using a hydrogen anneal | Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh | 2017-05-30 |
| 9660035 | Semiconductor device including superlattice SiGe/Si fin structure | Tenko Yamashita, Chun-Chen Yeh | 2017-05-23 |
| 9659942 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Kangguo Cheng, Ali Khakifirooz | 2017-05-23 |
| 9659964 | Method and structure for preventing epi merging in embedded dynamic random access memory | Kangguo Cheng, Ali Khakifirooz | 2017-05-23 |
| 9653575 | Vertical transistor with a body contact for back-biasing | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-05-16 |
| 9653582 | Forming a Fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2017-05-16 |
| 9653456 | MIM capacitor formation in RMG module | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-05-16 |
| 9634005 | Gate planarity for FinFET using dummy polish stop | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-04-25 |
| 9627278 | Method of source/drain height control in dual epi finFET formation | Kangguo Cheng, Ali Khakifirooz | 2017-04-18 |
| 9627373 | CMOS compatible fuse or resistor using self-aligned contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-04-18 |
| 9620644 | Composite spacer enabling uniform doping in recessed fin devices | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-04-11 |
| 9620416 | Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2017-04-11 |
| 9620619 | Borderless contact structure | David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang | 2017-04-11 |
| 9613954 | Selective removal of semiconductor fins | Kangguo Cheng, Ali Khakifirooz | 2017-04-04 |
| 9613869 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-04-04 |
| 9608069 | Self aligned epitaxial based punch through control | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-03-28 |
| 9607943 | Capacitors | Kangguo Cheng, Christopher J. Penny, Theodorus E. Standaert, Junli Wang | 2017-03-28 |
| 9607900 | Method and structure to fabricate closely packed hybrid nanowires at scaled pitch | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-03-28 |
| 9601378 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Kangguo Cheng, Theodorus E. Standaert | 2017-03-21 |
| 9601621 | Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-03-21 |
| 9595597 | Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-03-14 |
| 9583599 | Forming a fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2017-02-28 |
| 9583572 | FinFET devices having silicon germanium channel fin structures with uniform thickness | Keith E. Fogel, Pouya Hashemi, Alexander Reznicek | 2017-02-28 |
| 9577099 | Diamond shaped source drain epitaxy with underlying buffer layer | Eric C. Harley, Yue Ke, Alexander Reznicek, Henry K. Utomo | 2017-02-21 |
| 9576980 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-02-21 |