| RE50596 |
On-chip reliability monitor and method |
John A. Fifield, Eric D. Hunt-Schroeder |
2025-09-23 |
| 10535379 |
Latching current sensing amplifier for memory array |
Darren L. Anand, John A. Fifield, Eric D. Hunt-Schroeder |
2020-01-14 |
| 10429434 |
On-chip reliability monitor and method |
John A. Fifield, Eric D. Hunt-Schroeder |
2019-10-01 |
| 10020047 |
Static random access memory (SRAM) write assist circuit with improved boost |
Eric D. Hunt-Schroeder, John A. Fifield |
2018-07-10 |
| 9870979 |
Double-sided segmented line architecture in 3D integration |
Pooja R. Batra, John W. Golz, Toshiaki Kirihata |
2018-01-16 |
| 9779783 |
Latching current sensing amplifier for memory array |
Darren L. Anand, John A. Fifield, Eric D. Hunt-Schroeder |
2017-10-03 |
| 9559040 |
Double-sided segmented line architecture in 3D integration |
Pooja R. Batra, John W. Golz, Toshiaki Kirihata |
2017-01-31 |
| 9093175 |
Signal margin centering for single-ended eDRAM sense amplifier |
John E. Barth, Jr., John A. Fifield |
2015-07-28 |
| 8902679 |
Memory array with on and off-state wordline voltages having different temperature coefficients |
John A. Fifield |
2014-12-02 |
| 8649239 |
Multi-bank random access memory structure with global and local signal buffering for improved performance |
Darren L. Anand, John A. Fifield, Matthew Christopher Lanahan |
2014-02-11 |
| 7221601 |
Timer lockout circuit for synchronous applications |
Alan D. Norris, Samuel Weinstein |
2007-05-22 |
| 7194670 |
Command multiplier for built-in-self-test |
Jonathan R. Fales, Gregory J. Fredeman, Kevin W. Gorman, Toshiaki Kirihata, Alan D. Norris +2 more |
2007-03-20 |
| 7085180 |
Method and structure for enabling a redundancy allocation during a multi-bank operation |
Gregory J. Fredeman, Toshiaki Kirihata, Matthew R. Wordeman |
2006-08-01 |
| 7068564 |
Timer lockout circuit for synchronous applications |
Alan D. Norris, Samuel Weinstein |
2006-06-27 |
| 6693843 |
Wordline on and off voltage compensation circuit based on the array device threshold voltage |
Thomas M. Maffitt, Russell J. Houghton, William R. Tonti, Kevin McStay |
2004-02-17 |
| 6580650 |
DRAM word line voltage control to insure full cell writeback level |
Wayne F. Ellis, Russell J. Houghton, Thomas M. Maffitt, William R. Tonti |
2003-06-17 |
| 6580655 |
Pre-charge circuit and method for memory devices with shared sense amplifiers |
Michael Killian |
2003-06-17 |
| 6522154 |
Oxide tracking voltage reference |
John A. Fifield, Thomas M. Maffitt, Nicholas Heel |
2003-02-18 |
| 6399990 |
Isolated well ESD device |
Ciaran J. Brennan, Michael Killian, William R. Tonti |
2002-06-04 |
| 6400202 |
Programmable delay element and synchronous DRAM using the same |
John A. Fifield, Nicholas M. van Heel, David Chapman, David E. Douse |
2002-06-04 |
| 6348827 |
Programmable delay element and synchronous DRAM using the same |
John A. Fifield, Nicholas M. van Heel, David Chapman, David E. Douse |
2002-02-19 |
