Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7037794 | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain | Gary B. Bronner, Ramachandra Divakaruni, Byeong Y. Kim | 2006-05-02 |
| 7018551 | Pull-back method of forming fins in FinFets | Dureseti Chidambarrao, Yujun Li, Kenneth T. Settlemyer, Jr. | 2006-03-28 |
| 6998666 | Nitrided STI liner oxide for reduced corner device impact on vertical device performance | Rama Divakaruni, Rajarao Jammy | 2006-02-14 |
| 6987042 | Method of forming a collar using selective SiGe/Amorphous Si Etch | Naim Moumen, Porshia Wrschka | 2006-01-17 |
| 6967384 | Structure and method for ultra-small grain size polysilicon | Dureseti Chidambarrao | 2005-11-22 |
| 6967147 | Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor | Helmut Tews | 2005-11-22 |
| 6960514 | Pitcher-shaped active area for field effect transistor and method of forming same | Rama Divakaruni, Johnathan E. Faltermeier, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan +5 more | 2005-11-01 |
| 6946345 | Self-aligned buried strap process using doped HDP oxide | Wolfgang Bergner, Richard A. Conti, Andreas Knorr, Rolf Weis | 2005-09-20 |
| 6933206 | Trench isolation employing a high aspect ratio trench | Andreas Knorr | 2005-08-23 |
| 6933183 | Selfaligned source/drain FinFET process flow | Edward J. Nowak | 2005-08-23 |
| 6924178 | Oxide/nitride stacked in FinFET spacer process | — | 2005-08-02 |
| 6905976 | Structure and method of forming a notched gate field effect transistor | Yujun Li, Naim Moumen, Porshia Wrschka | 2005-06-14 |
| 6893911 | Process integration for integrated circuits | — | 2005-05-17 |
| 6853025 | Trench capacitor with buried strap | Helmut Tews, Stephan Kudelka | 2005-02-08 |
| 6790739 | Structure and methods for process integration in vertical DRAM cell fabrication | Rajeev Malik, Larry Nesbit, Rama Divakaruni | 2004-09-14 |
| 6770526 | Silicon nitride island formation for increased capacitance | Michael P. Chudzik, Joseph F. Shepard, Jr. | 2004-08-03 |
| 6759291 | Self-aligned near surface strap for high density trench DRAMS | Ramachandra Divakaruni, Jack A. Mandelman, Ulrike Gruening, Johann Alsmeier, Gary B. Bronner | 2004-07-06 |
| 6746933 | Pitcher-shaped active area for field effect transistor and method of forming same | Rama Divakaruni, Johnathan E. Faltermeier, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan +5 more | 2004-06-08 |
| 6677205 | Integrated spacer for gate/source/drain isolation in a vertical array structure | — | 2004-01-13 |
| 6667504 | Self-aligned buried strap process using doped HDP oxide | Wolfgang Bergner, Richard A. Conti, Andreas Knorr, Rolf Weis | 2003-12-23 |
| 6620676 | Structure and methods for process integration in vertical DRAM cell fabrication | Rajeev Malik, Larry Nesbit, Rama Divakaruni | 2003-09-16 |
| 6607984 | Removable inorganic anti-reflection coating process | Gill Yong Lee, Scott D. Halle | 2003-08-19 |
| 6602745 | Field effect transistor and method of fabrication | Peter Thwaite | 2003-08-05 |
| 6579759 | Formation of self-aligned buried strap connector | Michael P. Chudzik, Ramachandra Divakaruni, Rajarao Jammy | 2003-06-17 |
| 6579768 | Field effect transistor and method of fabrication | Peter Thwaite | 2003-06-17 |