Issued Patents All Time
Showing 101–125 of 186 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10985273 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2021-04-20 |
| 10985069 | Gate stack optimization for wide and narrow nanosheet transistor devices | Takashi Ando, Choonghyun Lee | 2021-04-20 |
| 10978356 | Tri-layer STI liner for nanosheet leakage control | Choonghyun Lee, Xin Miao, Alexander Reznicek | 2021-04-13 |
| 10971593 | Oxygen reservoir for low threshold voltage P-type MOSFET | Takashi Ando, Choonghyun Lee | 2021-04-06 |
| 10971407 | Method of forming a complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate | Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2021-04-06 |
| 10943903 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2021-03-09 |
| 10943787 | Confined work function material for gate-all around transistor devices | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2021-03-09 |
| 10937883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2021-03-02 |
| 10937862 | Nanosheet substrate isolated source/drain epitaxy via airgap | Alexander Reznicek, Choonghyun Lee, Xin Miao | 2021-03-02 |
| 10930793 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung | 2021-02-23 |
| 10916659 | Asymmetric threshold voltage FinFET device by partial channel doping variation | Alexander Reznicek, Choonghyun Lee, Pouya Hashemi, Takashi Ando | 2021-02-09 |
| 10903360 | Vertically integrated memory cells with complementary pass transistor selectors | Bahman Hekmatshoartabari, Ruilong Xie, Alexander Reznicek | 2021-01-26 |
| 10903318 | External resistance reduction with embedded bottom source/drain for vertical transport FET | Choonghyun Lee, Reinaldo Vega, Miaomiao Wang | 2021-01-26 |
| 10896965 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2021-01-19 |
| 10896962 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Alexander Reznicek, Choonghyun Lee, Pouya Hashemi | 2021-01-19 |
| 10896816 | Silicon residue removal in nanosheet transistors | Zhenxing Bi, Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian +2 more | 2021-01-19 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Shogo Mochizuki, Xin Miao | 2021-01-05 |
| 10886376 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2021-01-05 |
| 10886368 | I/O device scheme for gate-all-around transistors | Alexander Reznicek, Choonghyun Lee, Xin Miao | 2021-01-05 |
| 10886369 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2021-01-05 |
| 10879352 | Vertically stacked nFETs and pFETs with gate-all-around structure | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2020-12-29 |
| 10879311 | Vertical transport Fin field effect transistors combined with resistive memory structures | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2020-12-29 |
| 10832960 | Quadruple gate dielectric for gate-all-around transistors | Takashi Ando, Choonghyun Lee | 2020-11-10 |
| 10825736 | Nanosheet with selective dipole diffusion into high-k | Takashi Ando, Choonghyun Lee, Alexander Reznicek | 2020-11-03 |
| 10804410 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung | 2020-10-13 |