Issued Patents All Time
Showing 51–75 of 186 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2022-11-08 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2022-11-08 |
| 11450659 | On-chip decoupling capacitor | Alexander Reznicek, Ruilong Xie, Lan Yu | 2022-09-20 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Alexander Reznicek, Choonghyun Lee, Pouya Hashemi | 2022-09-13 |
| 11430660 | Confined work function material for gate-all around transistor devices | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2022-08-30 |
| 11404581 | Wimpy vertical transport field effect transistor with dipole liners | Alexander Reznicek, Xin Miao, Choonghyun Lee | 2022-08-02 |
| 11398480 | Transistor having forked nanosheets with wraparound contacts | Ruilong Xie, Alexander Reznicek, Xin Miao | 2022-07-26 |
| 11387342 | Multi threshold voltage for nanosheet | Takashi Ando, Choonghyun Lee, Alexander Reznicek | 2022-07-12 |
| 11380843 | Phase change memory using multiple stacks of PCM materials | Tian Shen, Heng Wu, Kevin W. Brew | 2022-07-05 |
| 11329167 | Fishbone long channel nanosheet device | Xin Miao, Ruilong Xie, Alexander Reznicek | 2022-05-10 |
| 11316105 | Phase change material switch and method of fabricating same | Tian Shen, Ruilong Xie, Kevin W. Brew, Heng Wu | 2022-04-26 |
| 11314805 | Method and apparatus for retrieving audio file, server, and computer-readable storage medium | Hui Wang | 2022-04-26 |
| 11302813 | Wrap around contact for nanosheet source drain epitaxy | Alexander Reznicek, Xin Miao, Choonghyun Lee | 2022-04-12 |
| 11295988 | Semiconductor FET device with bottom isolation and high-κ first | Ruilong Xie, Julien Frougier, Alexander Reznicek, Takashi Ando | 2022-04-05 |
| 11295983 | Transistor having source or drain formation assistance regions with improved bottom isolation | Ruilong Xie, Alexander Reznicek, Effendi Leobandung | 2022-04-05 |
| 11289484 | Forming source and drain regions for sheet transistors | Ruilong Xie, Xin Miao, Alexander Reznicek | 2022-03-29 |
| 11282186 | Anomaly detection using image-based physical characterization | Dechao Guo, Liying Jiang, Derrick Liu, Huimei Zhou | 2022-03-22 |
| 11251094 | Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor | Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2022-02-15 |
| 11245009 | Asymmetric channel FinFETs with wrap around channel | Alexander Reznicek | 2022-02-08 |
| 11239359 | Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer | Choonghyun Lee, Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2022-02-01 |
| 11222979 | Field-effect transistor devices with sidewall implant under bottom dielectric isolation | Xin Miao, Alexander Reznicek, Ruilong Xie | 2022-01-11 |
| 11205728 | Vertical field effect transistor with reduced parasitic capacitance | Choonghyun Lee, Alexander Reznicek, Xin Miao | 2021-12-21 |
| 11195911 | Bottom dielectric isolation structure for nanosheet containing devices | Ruilong Xie, Xin Miao, Takashi Ando | 2021-12-07 |
| 11189661 | FinFET 2T2R RRAM | Alexander Reznicek, Takashi Ando, Pouya Hashemi, Choonghyun Lee | 2021-11-30 |
| 11177366 | Gate induced drain leakage reduction in FinFETs | Alexander Reznicek, Takashi Ando, Ruilong Xie | 2021-11-16 |