Issued Patents All Time
Showing 151–175 of 186 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10566435 | Gate stack quality for gate-all-around field-effect transistors | Takashi Ando, Choonghyun Lee | 2020-02-18 |
| 10559692 | Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor | Alexander Reznicek, Xin Miao, Choonghyun Lee | 2020-02-11 |
| 10559676 | Vertical FET with differential top spacer | Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2020-02-11 |
| 10553696 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2020-02-04 |
| 10553679 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2020-02-04 |
| 10553678 | Vertically stacked dual channel nanosheet devices | Choonghyun Lee, Pouya Hashemi, Takashi Ando, Alexander Reznicek | 2020-02-04 |
| 10546925 | Vertically stacked nFET and pFET with dual work function | Alexander Reznicek, Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2020-01-28 |
| 10541239 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Hemanth Jagannathan, Choonghyun Lee, Chun Wing Yeung | 2020-01-21 |
| 10529716 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2020-01-07 |
| 10529850 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2020-01-07 |
| 10522419 | Stacked field-effect transistors (FETs) with shared and non-shared gates | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2019-12-31 |
| 10468532 | Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor | Alexander Reznicek, Xin Miao, Choonghyun Lee | 2019-11-05 |
| 10453937 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Heng Wu, Chun Wing Yeung | 2019-10-22 |
| 10439063 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Shogo Mochizuki, Xin Miao | 2019-10-08 |
| 10381438 | Vertically stacked NFETS and PFETS with gate-all-around structure | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2019-08-13 |
| 10361131 | Stacked field-effect transistors (FETs) with shared and non-shared gates | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2019-07-23 |
| 10355103 | Long channels for transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Heng Wu, Chun Wing Yeung | 2019-07-16 |
| 10347743 | Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer | Kangguo Cheng, Juntao Li, Peng Xu | 2019-07-09 |
| 10332809 | Method and structure to introduce strain in stack nanosheet field effect transistor | Takashi Ando, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2019-06-25 |
| 10326001 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Heng Wu, Chun Wing Yeung | 2019-06-18 |
| 10319846 | Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness | Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2019-06-11 |
| 10312326 | Long channels for transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Heng Wu, Chun Wing Yeung | 2019-06-04 |
| 10243060 | Uniform low-k inner spacer module in gate-all-around (GAA) transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung | 2019-03-26 |
| 10236217 | Stacked field-effect transistors (FETs) with shared and non-shared gates | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2019-03-19 |
| 10217841 | Forming an uniform L-shaped inner spacer for a vertical transport fin field effect transistor (VT FinFET) | Kangguo Cheng, Juntao Li, Peng Xu | 2019-02-26 |