Issued Patents All Time
Showing 1,176–1,200 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9041062 | Silicon-on-nothing FinFETs | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2015-05-26 |
| 9035391 | Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials | Thomas N. Adam, Kangguo Cheng, Paul C. Jamison, Ali Khakifirooz | 2015-05-19 |
| 9034741 | Halo region formation by epitaxial growth | Thomas N. Adam, Keith E. Fogel, Judson R. Holt, Balasubramanian Pranatharthiharan | 2015-05-19 |
| 9035365 | Raised source/drain and gate portion with dielectric spacer or air gap spacer | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2015-05-19 |
| 9006054 | Lateral diode compatible with FinFET and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-04-14 |
| 9006789 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-04-14 |
| 8999791 | Formation of semiconductor structures with variable gate lengths | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-04-07 |
| 8999779 | Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings | Sebastian Naczas, Vamsi K. Paruchuri, Dominic J. Schepis | 2015-04-07 |
| 8993406 | FinFET device having a merged source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same | Pranita Kerber, Qiqing C. Ouyang | 2015-03-31 |
| 8994072 | Reduced resistance SiGe FinFET devices and method of forming same | Pranita Kerber, Qiping C. Ouyang | 2015-03-31 |
| 8993399 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-03-31 |
| 8987069 | Semiconductor substrate with multiple SiGe regions having different germanium concentrations by a single epitaxy process | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-03-24 |
| 8987093 | Multigate finFETs with epitaxially-grown merged source/drains | Eric C. Harley, Judson R. Holt, Thomas N. Adam | 2015-03-24 |
| 8981493 | FinFET and method of fabrication | Kangguo Cheng, Thomas N. Adam, Ali Khakifirooz | 2015-03-17 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-03-10 |
| 8975697 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-03-10 |
| 8969934 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-03-03 |
| 8962434 | Field effect transistors with varying threshold voltages | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Thomas N. Adam | 2015-02-24 |
| 8963248 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Ali Khakifirooz, Pranita Kerber | 2015-02-24 |
| 8956938 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Kangguo Cheng, Ali Khakifirooz, Thomas N. Adam | 2015-02-17 |
| 8946064 | Transistor with buried silicon germanium for improved proximity control and optimized recess shape | Thomas N. Adam, Judson R. Holt, Thomas A. Wallner | 2015-02-03 |
| 8946033 | Merged fin finFET with (100) sidewall surfaces and method of making same | Thomas N. Adam, Keith E. Fogel, Jinghong Li | 2015-02-03 |
| 8946063 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Ali Khakifirooz, Pranita Kerber | 2015-02-03 |
| 8927363 | Integrating channel SiGe into pFET structures | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-01-06 |
| 8928090 | Self-aligned contact structure for replacement metal gate | Soon-Cheon Seo, Balasubramanian S. Haran | 2015-01-06 |