Issued Patents All Time
Showing 1,126–1,150 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-02-09 |
| 9257531 | Self-aligned contact structure for replacement metal gate | Soon-Cheon Seo, Balasubramanian S. Haran | 2016-02-09 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-02-02 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-02-02 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Eric C. Harley, Yue Ke, Ali Khakifirooz | 2016-01-26 |
| 9236397 | FinFET device containing a composite spacer structure | Judson R. Holt, Jinghong Li, Sanjay C. Mehta, Dominic J. Schepis | 2016-01-12 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-01-12 |
| 9230992 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Qiqing C. Ouyang | 2016-01-05 |
| 9224822 | High percentage silicon germanium alloy fin formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-12-29 |
| 9224811 | Stacked semiconductor device | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2015-12-29 |
| 9219154 | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-12-22 |
| 9219139 | Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-12-22 |
| 9214567 | Nanowire compatible E-fuse | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-12-15 |
| 9214462 | Recessed source drain contact regions independent of device pitch by unmerged epitaxy on fin portions | Kangguo Cheng, Ali Khakifirooz, Eric D. Marshall, Benjamen N. Taber | 2015-12-15 |
| 9209065 | Engineered substrate and device for co-integration of strained silicon and relaxed silicon | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu | 2015-12-08 |
| 9202812 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-12-01 |
| 9202689 | Transistor with improved sigma-shaped embedded stressor and method of formation | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-12-01 |
| 9196479 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-11-24 |
| 9190517 | Methods for making a semiconductor device with shaped source and drain recesses and related devices | Nicolas Loubet, Douglas Charles LaTulipe | 2015-11-17 |
| 9190487 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan +2 more | 2015-11-17 |
| 9190471 | Semiconductor structure having a source and a drain with reverse facets | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Jinghong Li | 2015-11-17 |
| 9184179 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-11-10 |
| 9184042 | Wafer backside particle mitigation | Marc A. Bergendahl, James J. Demarest, Alex Richard Hubbard, Richard C. Johnson, Ryan O. Jung +3 more | 2015-11-10 |
| 9159811 | Growing buffer layers in bulk finFET structures | Kangguo Cheng, Ali Khakifirooz, Charan V. Surisetty | 2015-10-13 |
| 9153647 | Integrated circuit having heterostructure FinFET with tunable device parameters and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-10-06 |