Issued Patents All Time
Showing 1,151–1,175 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9129938 | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-09-08 |
| 9123826 | Single crystal source-drain merged by polycrystalline material | Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan, Timothy J. McArdle +1 more | 2015-09-01 |
| 9105723 | Multi-height FinFETs with coplanar topography | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-08-11 |
| 9105663 | FinFET with silicon germanium stressor and method of forming | Kangguo Cheng, Ali Khakifirooz, Nicolas Loubet, Shogo Mochizuki, Raghavasimhan Sreenivasan +1 more | 2015-08-11 |
| 9093533 | FinFET structures having silicon germanium and silicon channels | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2015-07-28 |
| 9093260 | Thin hetereostructure channel device | Thomas N. Adam, Kangguo Cheng, Hong He, Ali Khakifirooz | 2015-07-28 |
| 9087869 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-07-21 |
| 9087859 | FinFET with enhanced embedded stressor | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-07-21 |
| 9087796 | Semiconductor fabrication method using stop layer | Thomas N. Adam, Donald F. Canaperi, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan +1 more | 2015-07-21 |
| 9087724 | Method and structure for finFET CMOS | Ali Khakifirooz, Kangguo Cheng | 2015-07-21 |
| 9087687 | Thin heterostructure channel device | Thomas N. Adam, Kangguo Cheng, Hong He, Ali Khakifirooz | 2015-07-21 |
| 9070771 | Bulk finFET with controlled fin height and high-k liner | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-06-30 |
| 9064789 | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-06-23 |
| 9059323 | Method of forming fin-field effect transistor (finFET) structure | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-06-16 |
| 9059253 | Self-aligned contacts for replacement metal gate transistors | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan, Thomas N. Adam | 2015-06-16 |
| 9059208 | Replacement gate integration scheme employing multiple types of disposable gate structures | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-06-16 |
| 9059207 | Strained channel for depleted channel semiconductor devices | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Davood Shahrjerdi | 2015-06-16 |
| 9059206 | Epitaxial grown extremely shallow extension region | Bruce B. Doris, Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-06-16 |
| 9059164 | Embedded interlevel dielectric barrier layers for replacement metal gate field effect transistors | Kangguo Cheng, Ali Khakifirooz, Charan V. Surisetty | 2015-06-16 |
| 9059139 | Raised source/drain and gate portion with dielectric spacer or air gap spacer | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2015-06-16 |
| 9059132 | Self aligned capacitor fabrication | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-06-16 |
| 9058992 | Lateral diode compatible with FinFET and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-06-16 |
| 9054218 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2015-06-09 |
| 9053939 | Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling | Thomas N. Adam, David L. Harame, Qizhi Liu | 2015-06-09 |
| 9048262 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2015-06-02 |