Issued Patents All Time
Showing 1,201–1,225 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8921908 | On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-12-30 |
| 8916443 | Semiconductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2014-12-23 |
| 8901672 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2014-12-02 |
| 8900978 | Methods for making a semiconductor device with shaped source and drain recesses and related devices | Nicolas Loubet, Douglas Charles LaTulipe | 2014-12-02 |
| 8900951 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2014-12-02 |
| 8900934 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Sebastian Naczas +1 more | 2014-12-02 |
| 8896063 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Sebastian Naczas +1 more | 2014-11-25 |
| 8895395 | Reduced resistance SiGe FinFET devices and method of forming same | Pranita Kerber, Qiqing C. Ouyang | 2014-11-25 |
| 8895381 | Method of co-integration of strained-Si and relaxed Si or strained SiGe FETs on insulator with planar and non-planar architectures | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2014-11-25 |
| 8889495 | Semiconductor alloy fin field effect transistor | Kangguo Cheng, Thomas N. Adam, Ali Khakifirooz | 2014-11-18 |
| 8884344 | Self-aligned contacts for replacement metal gate transistors | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan, Thomas N. Adam | 2014-11-11 |
| 8877604 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-11-04 |
| 8872172 | Embedded source/drains with epitaxial oxide underlayer | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan, Thomas N. Adam | 2014-10-28 |
| 8865561 | Back-gated substrate and semiconductor device, and related method of fabrication | Kangguo Cheng, Thomas N. Adam, Bruce B. Doris, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2014-10-21 |
| 8866227 | Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channels | Thomas N. Adam, Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz +2 more | 2014-10-21 |
| 8859376 | Transistor with improved sigma-shaped embedded stressor and method of formation | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-10-14 |
| 8853750 | FinFET with enhanced embedded stressor | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-10-07 |
| 8841189 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2014-09-23 |
| 8841185 | High density bulk fin capacitor | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng | 2014-09-23 |
| 8841188 | Bulk finFET with controlled fin height and high-K liner | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-09-23 |
| 8828831 | Epitaxial replacement of a raised source/drain | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2014-09-09 |
| 8815656 | Semiconductor device and method with greater epitaxial growth on 110 crystal plane | Thomas N. Adam, Kangguo Cheng, Judson R. Holt, Keith H. Tabakman | 2014-08-26 |
| 8816436 | Method and structure for forming fin resistors | Kangguo Cheng, Thomas N. Adam, Ali Khakifirooz | 2014-08-26 |
| 8809920 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan +2 more | 2014-08-19 |
| 8809168 | Growing compressively strained silicon directly on silicon at low temperatures | Stephen W. Bedell, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2014-08-19 |