Issued Patents All Time
Showing 301–325 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10903275 | Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors | Bahman Hekmatshoartabari, Tak H. Ning | 2021-01-26 |
| 10903210 | Sub-fin doped bulk fin field effect transistor (FinFET), Integrated Circuit (IC) and method of manufacture | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-01-26 |
| 10900952 | Dual surface charge sensing biosensor | Jeng-Bang Yau, Bahman Hekmatshoartabari | 2021-01-26 |
| 10896971 | Vertical transistor with body contact fabrication | Tak H. Ning, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2021-01-19 |
| 10896962 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2021-01-19 |
| 10896912 | Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2021-01-19 |
| 10892346 | Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area | Tak H. Ning, Sufi Zafar, Oscar van der Straten | 2021-01-12 |
| 10892336 | Wrap-around-contact structure for top source/drain in vertical FETS | Choonghyun Lee, Christopher J. Waskiewicz, Hemanth Jagannathan | 2021-01-12 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Shogo Mochizuki, Jingyun Zhang, Xin Miao | 2021-01-05 |
| 10886385 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2021-01-05 |
| 10886369 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Jingyun Zhang, Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2021-01-05 |
| 10886368 | I/O device scheme for gate-all-around transistors | Jingyun Zhang, Choonghyun Lee, Xin Miao | 2021-01-05 |
| 10886275 | Nanosheet one transistor dynamic random access device with silicon/silicon germanium channel and common gate structure | Karthik Balakrishnan, Bahman Hekmatshoartabari, Clint Jason Oteri | 2021-01-05 |
| 10886333 | Memory structure including gate controlled three-terminal metal oxide components | Bahman Hekmatshoartabari, Karthik Balakrishnan | 2021-01-05 |
| 10879311 | Vertical transport Fin field effect transistors combined with resistive memory structures | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2020-12-29 |
| 10879352 | Vertically stacked nFETs and pFETs with gate-all-around structure | Jingyun Zhang, Takashi Ando, Pouya Hashemi, Choonghyun Lee | 2020-12-29 |
| 10879308 | Stacked nanosheet 4T2R unit cell for neuromorphic computing | Takashi Ando, Bahman Hekmatshoartabari | 2020-12-29 |
| 10872953 | Nanosheet substrate isolated source/drain epitaxy by counter-doped bottom epitaxy | Bahman Hekmatshoartabari | 2020-12-22 |
| 10840360 | Nanosheet device with close source drain proximity | Veeraraghavan S. Basker, Shogo Mochizuki | 2020-11-17 |
| 10832941 | Airgap isolation for backend embedded memory stack pillar arrays | Soon-Cheon Seo, Injo Ok, Choonghyun Lee | 2020-11-10 |
| 10833155 | Vertical field effect transistor with top and bottom airgap spacers | Chun-Chen Yeh, Veeraraghavan S. Basker, Junli Wang | 2020-11-10 |
| 10833175 | Formation of dislocation-free SiGe finFET using porous silicon | Stephen W. Bedell, Kangguo Cheng, Jeehwan Kim, Devendra K. Sadana | 2020-11-10 |
| 10833198 | Confined source drain epitaxy to reduce shorts in CMOS integrated circuits | Ruilong Xie, Chun-Chen Yeh, Lan Yu | 2020-11-10 |
| 10833181 | Single column compound semiconductor bipolar junction transistor with all-around base | Karthik Balakrishnan, Pouya Hashemi, Tak H. Ning | 2020-11-10 |
| 10833192 | Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2020-11-10 |