Issued Patents All Time
Showing 351–375 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10741754 | Resistive memory with amorphous silicon filaments | Bahman Hekmatshoartabari | 2020-08-11 |
| 10741652 | Wrap-around-contact structure for top source/drain in vertical FETs | Choonghyun Lee, Christopher J. Waskiewicz, Hemanth Jagannathan | 2020-08-11 |
| 10741387 | High percentage silicon germanium graded buffer layers with lattice matched Ga(As1-yPy) interlayers | Stephen W. Bedell | 2020-08-11 |
| 10741492 | FinFET fuses formed at tight pitch dimensions | Oscar van der Straten, Praneet Adusumilli, Bahman Hekmatshoartabari | 2020-08-11 |
| 10741645 | Thin-base high frequency lateral bipolar junction transistor | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2020-08-11 |
| 10734479 | FinFET CMOS with asymmetric gate threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2020-08-04 |
| 10734505 | Lateral bipolar junction transistor with dual base region | Pouya Hashemi, Bahman Hekmatshoartabari, Karthik Balakrishnan, Jeng-Bang Yau | 2020-08-04 |
| 10734447 | Field-effect transistor unit cells for neural networks with differential weights | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2020-08-04 |
| 10734518 | Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2020-08-04 |
| 10734575 | ReRAM structure formed by a single process | Oscar van der Straten, Adra Carr, Praneet Adusumilli | 2020-08-04 |
| 10734286 | Multiple dielectrics for gate-all-around transistors | Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2020-08-04 |
| 10734382 | Method for manufacturing a semiconductor structure including a very narrow aspect ratio trapping trench structure | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-08-04 |
| 10727070 | Liner-less contact metallization | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2020-07-28 |
| 10727299 | Lateral bipolar junction transistor with abrupt junction and compound buried oxide | Kevin K. Chan, Pouya Hashemi, Tak H. Ning | 2020-07-28 |
| 10727310 | Contact formation on germanium-containing substrates using hydrogenated silicon | Karthik Balakrishnan, Pouya Hashemi, Bahman Hekmatshoartabari | 2020-07-28 |
| 10720502 | Vertical transistors having a layer of charge carriers in the extension region for reduced extension region resistance | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2020-07-21 |
| 10720528 | Method and structure of stacked FinFET | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2020-07-21 |
| 10720427 | Diode connected vertical transistor | Karthik Balakrishnan, Pouya Hashemi | 2020-07-21 |
| 10714570 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2020-07-14 |
| 10714593 | Fabrication of strained vertical p-type field effect transistors by bottom condensation | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-07-14 |
| 10707332 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Soon-Cheon Seo | 2020-07-07 |
| 10707304 | Vertically stacked nFET and pFET with dual work function | Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2020-07-07 |
| 10700058 | Compound semiconductor devices having buried resistors formed in buffer layer | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-06-30 |
| 10692859 | Large area diode co-integrated with vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-06-23 |
| 10692722 | Single process for linear and metal fill | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2020-06-23 |