Issued Patents All Time
Showing 26–50 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8709902 | Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure | Kerstin Ruttloff, Maciej Wiatr, Stefan Flachowsky | 2014-04-29 |
| 8703578 | Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations | Jan Hoentschel, Shiang Yang Ong, Stefan Flachowsky | 2014-04-22 |
| 8698243 | Semiconductor device with strain-inducing regions and method thereof | Stefan Flachowsky, Jan Hoentschel | 2014-04-15 |
| 8679924 | Self-aligned multiple gate transistor formed on a bulk substrate | Andy Wei, Vivien Schroeder, Thomas Werner, Johannes Groschopf | 2014-03-25 |
| 8679921 | Canyon gate transistor and methods for its fabrication | Stefan Flachowsky | 2014-03-25 |
| 8673728 | Complementary stress liner to improve DGO/AVT devices and poly and diffusion resistors | Stefan Flachowsky, Jan Hoentschel | 2014-03-18 |
| 8669151 | High-K metal gate electrode structures formed at different process stages of a semiconductor device | Jan Hoentschel, Sven Beyer, Uwe Griebenow | 2014-03-11 |
| 8664068 | Low-diffusion drain and source regions in CMOS transistors for low power/high performance applications | Jan Hoentschel, Stefan Flachowsky, Steven Langdon | 2014-03-04 |
| 8664072 | Source and drain architecture in an active region of a P-channel transistor by tilted implantation | — | 2014-03-04 |
| 8652956 | High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning | Sven Beyer, Klaus Hempel, Stefanie Steiner | 2014-02-18 |
| 8642430 | Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers | Stefan Flachowsky | 2014-02-04 |
| 8609533 | Methods for fabricating integrated circuits having substrate contacts and integrated circuits having substrate contacts | Stefan Flachowsky, Jan Hoentschel | 2013-12-17 |
| 8609509 | Superior integrity of high-k metal gate stacks by forming STI regions after gate metals | Peter Baars | 2013-12-17 |
| 8598007 | Methods of performing highly tilted halo implantation processes on semiconductor devices | Stefan Flachowsky, Jan Hoentschel | 2013-12-03 |
| 8574981 | Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same | Stefan Flachowsky, Peter Javorka, Jan Hoentschel | 2013-11-05 |
| 8558290 | Semiconductor device with dual metal silicide regions and methods of making same | Stefan Flachowsky | 2013-10-15 |
| 8536036 | Predoped semiconductor material for a high-K metal gate electrode structure of P- and N-channel transistors | Sven Beyer, Jan Hoentschel, Uwe Griebenow | 2013-09-17 |
| 8536034 | Methods of forming stressed silicon-carbon areas in an NMOS transistor | Stefan Flachowsky, Ralf Illgen, Jan Hoentschel | 2013-09-17 |
| 8536033 | SOI semiconductor device comprising a substrate diode and a film diode formed by using a common well implantation mask | Stefan Flachowsky | 2013-09-17 |
| 8524563 | Semiconductor device with strain-inducing regions and method thereof | Stefan Flachowsky, Jan Hoentschel | 2013-09-03 |
| 8524564 | Full silicidation prevention via dual nickel deposition approach | Peter Javorka, Stefan Flachowsky | 2013-09-03 |
| 8513083 | Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes | Peter Baars | 2013-08-20 |
| 8507348 | Field effect transistors for a flash memory comprising a self-aligned charge storage region | Sven Beyer, Uwe Griebenow, Jan Hoentschel | 2013-08-13 |
| 8508001 | Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same | Steven Langdon, Stefan Flachowsky | 2013-08-13 |
| 8501601 | Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy | Stefan Flachowsky, Steven Langdon, Jan Hoentschel | 2013-08-06 |