Issued Patents All Time
Showing 51–75 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2021-03-30 |
| 10950610 | Asymmetric gate cut isolation for SRAM | Bipul C. Paul, Ruilong Xie, Julien Frougier, Hui Zang | 2021-03-16 |
| 10872962 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2020-12-22 |
| 10818792 | Nanosheet field-effect transistors formed with sacrificial spacers | Julien Frougier, Ruilong Xie | 2020-10-27 |
| 10797138 | Vertical-transport field-effect transistors with self-aligned contacts | Emilie Bourjot, Steven Bentley | 2020-10-06 |
| 10770585 | Self-aligned buried contact for vertical field-effect transistor and method of production thereof | Ruilong Xie, Chanro Park, Andre P. Labonte | 2020-09-08 |
| 10727308 | Gate contact structure for a transistor | Ruilong Xie, Hao Tang, Cheng Chi, Lars Liebmann, Mark V. Raymond | 2020-07-28 |
| 10699942 | Vertical-transport field-effect transistors having gate contacts located over the active region | Ruilong Xie, Chanro Park, Steven R. Soss, Lars Liebmann, Hui Zang +1 more | 2020-06-30 |
| 10692991 | Gate-all-around field effect transistors with air-gap inner spacers and methods | Julien Frougier, Ruilong Xie | 2020-06-23 |
| 10685874 | Self-aligned cuts in an interconnect structure | Ruilong Xie, Hui Zang, Lei Sun, Lars Liebmann, Guillaume Bouche | 2020-06-16 |
| 10658243 | Method for forming replacement metal gate and related structures | Ruilong Xie, Steven R. Soss, Steven Bentley, Chanro Park | 2020-05-19 |
| 10651284 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2020-05-12 |
| 10629516 | Hybrid dual damascene structures with enlarged contacts | Julien Frougier, Ruilong Xie | 2020-04-21 |
| 10566436 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2020-02-18 |
| 10566248 | Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar | Ruilong Xie, Chanro Park, Guillaume Bouche | 2020-02-18 |
| 10541272 | Steep-switch vertical field effect transistor | Julien Frougier, Nicolas Loubet, Ruilong Xie | 2020-01-21 |
| 10522403 | Middle of the line self-aligned direct pattern contacts | Jason E. Stephens, Ruilong Xie, Lars Liebmann, Gregory A. Northrop | 2019-12-31 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Steven R. Soss, Steven Bentley, Julien Frougier, Ruilong Xie | 2019-12-17 |
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Ruilong Xie, Lars Liebmann, Bipul C. Paul, Nigel G. Cave | 2019-12-10 |
| 10490641 | Methods of forming a gate contact structure for a transistor | Ruilong Xie, Hao Tang, Cheng Chi, Lars Liebmann, Mark V. Raymond | 2019-11-26 |
| 10490455 | Gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-11-26 |
| 10483363 | Methods of forming a gate contact structure above an active region of a transistor | Ruilong Xie, Hao Tang, Cheng Chi, Lars Liebmann, Mark V. Raymond | 2019-11-19 |
| 10468300 | Contacting source and drain of a transistor device | Ruilong Xie, Andre P. Labonte, Lars Liebmann, Chanro Park, Nigel G. Cave +1 more | 2019-11-05 |
| 10388652 | Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same | Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann +4 more | 2019-08-20 |
| 10381354 | Contact structures and methods of making the contact structures | Emilie Bourjot | 2019-08-13 |