Issued Patents All Time
Showing 25 most recent of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8882995 | Process for predicting and reducing the corrosivity of a hydrocarbonaceous mixture | Lee-Huat Chia | 2014-11-11 |
| 7452808 | Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding | Yakub Aliyu, Mei Sheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2008-11-18 |
| 7268048 | Methods for elimination of arsenic based defects in semiconductor devices with isolation regions | Yin-Min Felicia Goh, Teck Wee Christopher Lim, Vincent Sih, Chian Yuh Sin, Ping Yu Ee +2 more | 2007-09-11 |
| 7186640 | Silicon-rich oxide for copper damascene interconnect incorporating low dielectric constant dielectrics | Liu Huang, John Sudijono | 2007-03-06 |
| 7179879 | Poly(arylene ether) dielectrics | Christopher Lim, Siu Choon Ng, Hardy Chan, Mei Sheng Zhou | 2007-02-20 |
| 7166250 | Poly(arylene ether) dielectrics | Christopher Lim, Siu Choon Ng, Hardy Chan, Mei Sheng Zhou | 2007-01-23 |
| 7078333 | Method to improve adhesion of dielectric films in damascene interconnects | Luona Goh, Siew Lok Toh, Tong Earn Tay | 2006-07-18 |
| 7071281 | Poly(arylene ether) dielectrics | Christopher Lim, Siu Choon Ng, Hardy Chan, Mei Sheng Zhou | 2006-07-04 |
| 7060613 | Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding | Yakub Aliyu, Mei Sheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2006-06-13 |
| 7005716 | Dual metal gate process: metals and their silicides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2006-02-28 |
| 6987321 | Copper diffusion deterrent interface | Yakub Aliyu, Mei Sheng Zhou, John Sudijono, Subbash Gupta, Sudipto Ranendra Roy +2 more | 2006-01-17 |
| 6967162 | Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding | Yakub Aliyu, Mei Sheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2005-11-22 |
| 6891233 | Methods to form dual metal gates by incorporating metals and their conductive oxides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2005-05-10 |
| 6846899 | Poly(arylene ether) dielectrics | Christopher Lim, Siu Choon Ng, Hardy Chan, Mei Sheng Zhou | 2005-01-25 |
| 6835989 | Methods to form dual metal gates by incorporating metals and their conductive oxides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2004-12-28 |
| 6821888 | Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding | Yakub Aliyu, Meisheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy | 2004-11-23 |
| 6813796 | Apparatus and methods to clean copper contamination on wafer edge | Sudipto Ranendra Roy, Subhash Gupta, Xu Yi, Yakub Aliyu, Mei Sheng Zhou +2 more | 2004-11-09 |
| 6797605 | Method to improve adhesion of dielectric films in damascene interconnects | Luona Goh, Siew Lok Toh, Tong Earn Tay | 2004-09-28 |
| 6762085 | Method of forming a high performance and low cost CMOS device | Jia Zhen Zheng, Soh Yun Siah, Liang-Choo Hsia, Eng Hua Lim, Chew Hoe Ang | 2004-07-13 |
| 6750519 | Dual metal gate process: metals and their silicides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2004-06-15 |
| 6730591 | Method of using silicon rich carbide as a barrier material for fluorinated materials | Licheng M. Han, Xu Yi, Mei Sheng Zhou, Joseph Xie | 2004-05-04 |
| 6720204 | Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding | John Sudijono, Yakub Aliyu, Mei Sheng Zhou, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2004-04-13 |
| 6705512 | Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding | Kwok Keung Paul Ho, Yi Xu, Yakub Aliyu, Mei Sheng Zhou, John Sudijono +2 more | 2004-03-16 |
| 6692579 | Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence | Sudipto Ranendra Roy, Yi Xu, Yakub Aliyu, Mei Sheng Zhou, John Sudijono +2 more | 2004-02-17 |
| 6690091 | Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layer | Yi Xu, Mei Sheng Zhou | 2004-02-10 |