Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11767455 | Superhydrophobic hemispherical array which can realize droplet pancake bouncing phenomenon | Jinlong Song, Xin Peng Liu, Xuyue WANG, Yuwen SUN | 2023-09-26 |
| 11104043 | Thermal extrusion method to fabricate large-dimension superhydrophobic cylinder pillar arrays with droplet pancake bouncing phenomenon | Jinlong Song, Changlin Zhao, Mingqian Gao, Xin Peng Liu | 2021-08-31 |
| 9269651 | Hybrid TSV and method for forming the same | Yu Hong, Zhao Feng | 2016-02-23 |
| 9006102 | Hybrid TSV and method for forming the same | Yu Hong, Zhao Feng | 2015-04-14 |
| 8916472 | Interconnect formation using a sidewall mask layer | Xiang Hu, Mingmei Wang | 2014-12-23 |
| 8354327 | Scheme for planarizing through-silicon vias | Chen Zengxiang, Zhao Feng, Yuan Shaoning | 2013-01-15 |
| 7538353 | Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures | John Sudijono, Koh Yee Wee | 2009-05-26 |
| 7208426 | Preventing plasma induced damage resulting from high density plasma deposition | John Sodijono | 2007-04-24 |
| 7186640 | Silicon-rich oxide for copper damascene interconnect incorporating low dielectric constant dielectrics | John Sudijono, Simon Chooi | 2007-03-06 |
| 7148157 | Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon | Hsia Choo, John Sudijono, Tan Juan Boon | 2006-12-12 |
| 7052932 | Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication | John Sudijono, Koh Yee Wee | 2006-05-30 |
| 6872633 | Deposition and sputter etch approach to extend the gap fill capability of HDP CVD process to ≦0.10 microns | John Sudijono | 2005-03-29 |
| 6787452 | Use of amorphous carbon as a removable ARC material for dual damascene fabrication | John Sudijono, Liang-Choo Hsia | 2004-09-07 |