Issued Patents All Time
Showing 176–200 of 223 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8871656 | Flowable films using alternative silicon precursors | Abhijit Basu Mallick | 2014-10-28 |
| 8808563 | Selective etch of silicon by way of metastable hydrogen termination | Anchuan Wang, Jingchun Zhang, Young S. Lee | 2014-08-19 |
| 8801952 | Conformal oxide dry etch | Anchuan Wang, Jingchun Zhang, Young S. Lee | 2014-08-12 |
| 8771539 | Remotely-excited fluorine and water vapor etch | Jingchun Zhang, Anchuan Wang | 2014-07-08 |
| 8771536 | Dry-etch for silicon-and-carbon-containing films | Jingchun Zhang, Anchuan Wang, Yunyu Wang, Young S. Lee | 2014-07-08 |
| 8765573 | Air gap formation | Abhijit Basu Mallick | 2014-07-01 |
| 8765574 | Dry etch process | Jingchun Zhang, Anchuan Wang | 2014-07-01 |
| 8759223 | Double patterning etching process | Kedar Sapre, Jing Tang, Ajay Bhatnagar, Shankar Venkataraman | 2014-06-24 |
| 8753985 | Molecular layer deposition of silicon carbide | Brian Saxton Underwood, Abhijit Basu Mallick | 2014-06-17 |
| 8741788 | Formation of silicon oxide using non-carbon flowable CVD processes | Jingmei Liang, Shankar Venkataraman | 2014-06-03 |
| 8741778 | Uniform dry etch in two stages | Dongqing Yang, Jing Tang | 2014-06-03 |
| 8679983 | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen | Yunyu Wang, Anchuan Wang, Jingchun Zhang, Young S. Lee | 2014-03-25 |
| 8679982 | Selective suppression of dry-etch rate of materials containing both silicon and oxygen | Yunyu Wang, Anchuan Wang, Jingchun Zhang, Young S. Lee | 2014-03-25 |
| 8647992 | Flowable dielectric using oxide liner | Jingmei Liang | 2014-02-11 |
| 8642481 | Dry-etch for silicon-and-nitrogen-containing films | Yunyu Wang, Anchuan Wang, Jingchun Zhang, Young S. Lee | 2014-02-04 |
| 8629067 | Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio | Jingmei Liang, Xiaolin Chen, Matthew L. Miller, Shankar Venkataraman | 2014-01-14 |
| 8563445 | Conformal layers by radical-component CVD | Jingmei Liang, Xiaolin Chen, Dongqing Li | 2013-10-22 |
| 8551891 | Remote plasma burn-in | Jingmei Liang, Lili Ji | 2013-10-08 |
| 8541312 | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen | Yunyu Wang, Anchuan Wang, Jingchun Zhang, Young S. Lee | 2013-09-24 |
| 8501629 | Smooth SiConi etch for silicon-containing films | Jing Tang, Dongqing Yang | 2013-08-06 |
| 8475674 | High-temperature selective dry etch having reduced post-etch solid residue | Kiran V. Thadani, Jing Tang, Dongqing Yang | 2013-07-02 |
| 8465903 | Radiation patternable CVD film | Timothy Weidman, Timothy Michaelson, Paul Deaton, Abhijit Basu Mallick, Amit Chatterjee | 2013-06-18 |
| 8466067 | Post-planarization densification | Jingmei Liang, Shankar Venkataraman | 2013-06-18 |
| 8466073 | Capping layer for reduced outgassing | Linlin Wang, Abhijit Basu Mallick | 2013-06-18 |
| 8445078 | Low temperature silicon oxide conversion | Jingmei Liang, Sukwon Hong, Anjana M. Patel | 2013-05-21 |