| 12312687 |
Powder coating device |
Maosheng Zhao, Tong Wang, Yanfeng Liu |
2025-05-27 |
| 11944020 |
Using aluminum as etch stop layer |
Sundar Narayanan, Natividad Vasquez, Zhen Gu |
2024-03-26 |
| 10873023 |
Using aluminum as etch stop layer |
Sundar Narayanan, Natividad Vasquez, Zhen Gu |
2020-12-22 |
| 9887096 |
Differential silicon oxide etch |
Seung Ho Park, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle |
2018-02-06 |
| 9236266 |
Dry-etch for silicon-and-carbon-containing films |
Jingchun Zhang, Anchuan Wang, Nitin K. Ingle, Young S. Lee |
2016-01-12 |
| 9034770 |
Differential silicon oxide etch |
Seung Ho Park, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle |
2015-05-19 |
| 8771536 |
Dry-etch for silicon-and-carbon-containing films |
Jingchun Zhang, Anchuan Wang, Nitin K. Ingle, Young S. Lee |
2014-07-08 |
| 8679982 |
Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
Anchuan Wang, Jingchun Zhang, Nitin K. Ingle, Young S. Lee |
2014-03-25 |
| 8679983 |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
Anchuan Wang, Jingchun Zhang, Nitin K. Ingle, Young S. Lee |
2014-03-25 |
| 8642481 |
Dry-etch for silicon-and-nitrogen-containing films |
Anchuan Wang, Jingchun Zhang, Nitin K. Ingle, Young S. Lee |
2014-02-04 |
| 8541312 |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
Anchuan Wang, Jingchun Zhang, Nitin K. Ingle, Young S. Lee |
2013-09-24 |
