Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12075712 | Resistive switching memory devices and method(s) for forming the resistive switching memory devices | Wee Chen Gan, Natividad Vasquez | 2024-08-27 |
| 11997932 | Resistive switching memory having confined filament formation and methods thereof | Wee Chen Gan, Natividad Vasquez, Wei Ti Lee | 2024-05-28 |
| 11944020 | Using aluminum as etch stop layer | Natividad Vasquez, Zhen Gu, Yunyu Wang | 2024-03-26 |
| 11793093 | Resistive random access memory and fabrication techniques | Sung Hyun Jo, Zhen Gu | 2023-10-17 |
| 10873023 | Using aluminum as etch stop layer | Natividad Vasquez, Zhen Gu, Yunyu Wang | 2020-12-22 |
| 10749110 | Memory stack liner comprising dielectric block layer material | Zhen Gu, Natividad Vasquez | 2020-08-18 |
| 10693062 | Regulating interface layer formation for two-terminal memory | Sung Hyun Jo, Liang Zhao | 2020-06-23 |
| 10522754 | Liner layer for dielectric block layer | Zhen Gu, Natividad Vasquez | 2019-12-31 |
| 10319908 | Integrative resistive memory in backend metal layers | Steve Maxwell, Natividad Vasquez, Harry Yue Gee | 2019-06-11 |
| 10290801 | Scalable silicon based resistive memory device | Steve Maxwell, Natividad Vasquez, Harry Yue Gee | 2019-05-14 |
| 10115819 | Recessed high voltage metal oxide semiconductor transistor for RRAM cell | Harry Yue Gee, Tanmay Kumar, Natividad Vasquez, Steven Patrick Maxwell | 2018-10-30 |
| 10096653 | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes | Steve Maxwell, Natividad Vasquez, Harry Yue Gee | 2018-10-09 |
| 10062845 | Flatness of memory cell surfaces | Harry Yue Gee, Zhen Gu, Natividad Vasquez | 2018-08-28 |
| 9741765 | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes | Steve Maxwell, Natividad Vasquez, Harry Yue Gee | 2017-08-22 |
| 9697874 | Monolithic memory comprising 1T1R code memory and 1TnR storage class memory | Mehdi Asnaashari | 2017-07-04 |
| 9595670 | Resistive random access memory (RRAM) cell and method for forming the RRAM cell | Harry Yue Gee, Steven Patrick Maxwell, Natividad Vasquez | 2017-03-14 |
| 9437814 | Mitigating damage from a chemical mechanical planarization process | Harry Yue Gee, Majid Milani, Natividad Vasquez, Steven Patrick Maxwell | 2016-09-06 |
| 9425046 | Method for surface roughness reduction after silicon germanium thin film deposition | Harry Yue Gee, Steven Patrick Maxwell, Natividad Vasquez | 2016-08-23 |
| 9343668 | Low temperature in-situ doped silicon-based conductor material for memory cell | Steve Maxwell, Sung Hyun Jo, Tanmay Kumar | 2016-05-17 |
| 9209396 | Regulating interface layer growth with N2O for two-terminal memory | — | 2015-12-08 |
| 8445381 | Oxide-nitride stack gate dielectric | Krishnaswamy Ramkumar | 2013-05-21 |
| 7371637 | Oxide-nitride stack gate dielectric | Krishnaswamy Ramkumar | 2008-05-13 |
| 7351663 | Removing whisker defects | Alex Kabansky, Hean Cheal Lee, Prabhuram Gopalan, Vinay Krishna | 2008-04-01 |
| 7189652 | Selective oxidation of gate stack | Alain Blosse, Krishnaswamy Ramkumar | 2007-03-13 |
| 7172914 | Method of making uniform oxide layer | — | 2007-02-06 |