BH

Bryan C. Hendrix

AC Advanced Technology & Materials Co.: 49 patents #5 of 410Top 2%
EN Entegris: 43 patents #2 of 643Top 1%
Infineon Technologies Ag: 6 patents #2,021 of 7,486Top 30%
SA Siemens Aktiengesellschaft: 2 patents #6,658 of 22,248Top 30%
RF Rose Acre Farms: 1 patents #6 of 10Top 60%
IN Intel: 1 patents #18,218 of 30,777Top 60%
📍 Danbury, CT: #7 of 826 inventorsTop 1%
🗺 Connecticut: #120 of 34,797 inventorsTop 1%
Overall (All Time): #15,941 of 4,157,543Top 1%
95
Patents All Time

Issued Patents All Time

Showing 51–75 of 95 patents

Patent #TitleCo-InventorsDate
8268665 Antimony and germanium complexes useful for CVD/ALD of metal thin films William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum +3 more 2012-09-18
8241704 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium James Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum 2012-08-14
8236097 Composition and method for low temperature deposition of silicon-containing films Ziyun Wang, Chongying Xu, Thomas H. Baum, Jeffrey F. Roeder 2012-08-07
8153833 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Ziyun Wang, Chongying Xu, Ravi Laxman, Thomas H. Baum, Jeffrey F. Roeder 2012-04-10
8034407 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium James Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum 2011-10-11
8008117 Antimony and germanium complexes useful for CVD/ALD of metal thin films William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum +4 more 2011-08-30
7964746 Copper precursors for CVD/ALD/digital CVD of copper metal films Tianniu Chen, Chongying Xu, Thomas H. Baum, Jeffrey F. Roeder, Juan E. Dominguez +2 more 2011-06-21
7910765 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Ziyun Wang, Chongying Xu, Ravi Laxman, Thomas H. Baum, Jeffrey F. Roeder 2011-03-22
7887883 Composition and method for low temperature deposition of silicon-containing films Ziyun Wang, Chongying Xu, Thomas H. Baum, Jeffrey F. Roeder 2011-02-15
7858525 Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka +1 more 2010-12-28
7838329 Antimony and germanium complexes useful for CVD/ALD of metal thin films William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum +4 more 2010-11-23
7786320 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Ziyun Wang, Chongying Xu, Ravi Laxman, Thomas H. Baum, Jeffrey F. Roeder 2010-08-31
7781605 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films Ziyun Wang, Chongying Xu, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum 2010-08-24
7713346 Composition and method for low temperature deposition of silicon-containing films Ziyun Wang, Chongying Xu, Thomas H. Baum, Jeffrey F. Roeder 2010-05-11
7601860 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films Ziyun Wang, Chongying Xu, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum 2009-10-13
7531679 Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride Ziyun Wang, Chongying Xu, Ravi Laxman, Thomas H. Baum, Jeffrey F. Roeder 2009-05-12
7446217 Composition and method for low temperature deposition of silicon-containing films Ziyun Wang, Chongying Xu, Thomas H. Baum, Jeffrey F. Roeder 2008-11-04
7370511 Gas sensor with attenuated drift characteristic Ing-Shin Chen, Frank Dimeo, Jr., Philip S. H. Chen, Jeffrey W. Neuner, James Welch 2008-05-13
7285308 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium James Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum 2007-10-23
7208427 Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum 2007-04-24
7094284 Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same Thomas H. Baum, Jeffrey F. Roeder, Chongying Xu 2006-08-22
7005392 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Thomas H. Baum, Chongying Xu, Jeffrey F. Roeder 2006-02-28
7005303 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Frank Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder +2 more 2006-02-28
6900498 Barrier structures for integration of high K oxides with Cu and Al electrodes Gregory T. Stauf, Jeffrey F. Roeder, Ing-Shin Chen 2005-05-31
6869638 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Thomas H. Baum, Chongying Xu, Jeffrey F. Roeder 2005-03-22