Issued Patents 2022
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11387320 | Transistors with high concentration of germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more | 2022-07-12 |
| 11380684 | Stacked transistor architecture including nanowire or nanoribbon thin film transistors | Gilbert Dewey, Aaron D. Lilak, Cheng-Ying Huang, Jack T. Kavalieros, Anh Phan +4 more | 2022-07-05 |
| 11374024 | Integrated circuits with stacked transistors and methods of manufacturing the same using processes which fabricate lower gate structures following completion of portions of an upper transistor | Aaron D. Lilak, Rishabh Mehandru, Gilbert Dewey, Anh Phan | 2022-06-28 |
| 11374004 | Pedestal fin structure for stacked transistor integration | Aaron D. Lilak, Rishabh Mehandru, Anh Phan, Gilbert Dewey, Stephen M. Cea +5 more | 2022-06-28 |
| 11367789 | Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs | Cheng-Ying Huang, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma +1 more | 2022-06-21 |
| 11367722 | Stacked nanowire transistor structure with different channel geometries for stress | Aaron D. Lilak, Stephen M. Cea, Gilbert Dewey, Roza Kotlyar, Rishabh Mehandru +4 more | 2022-06-21 |
| 11362188 | Field effect transistors with reduced electric field by thickening dielectric on the drain side | Dipanjan Basu, Sean T. Ma, Jack T. Kavalieros | 2022-06-14 |
| 11362189 | Stacked self-aligned transistors with single workfunction metal | Aaron D. Lilak, Rishabh Mehandru, Gilbert Dewey, Justin R. Weber | 2022-06-14 |
| 11355621 | Non-planar semiconductor device including a replacement channel structure | Gilbert Dewey, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani, Matthew V. Metz +2 more | 2022-06-07 |
| 11348916 | Leave-behind protective layer having secondary purpose | Aaron D. Lilak, Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski +2 more | 2022-05-31 |
| 11342227 | Stacked transistor structures with asymmetrical terminal interconnects | Aaron D. Lilak, Ehren Mannebach, Nafees Kabir, Patrick Morrow, Gilbert Dewey +1 more | 2022-05-24 |
| 11342457 | Strained thin film transistors | Prashant Majhi, Brian S. Doyle, Abhishek A. Sharma, Elijah V. Karpov, Ravi Pillarisetty +1 more | 2022-05-24 |
| 11342432 | Gate-all-around integrated circuit structures having insulator fin on insulator substrate | Aaron D. Lilak, Rishabh Mehandru, Cory E. Weber, Varun MISHRA | 2022-05-24 |
| 11342327 | Stacked transistor layout | Ravi Pillarisetty, Abhishek A. Sharma, Gilbert Dewey, Jack T. Kavalieros | 2022-05-24 |
| 11335796 | Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Jack T. Kavalieros | 2022-05-17 |
| 11335793 | Vertical tunneling field-effect transistors | Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Uygar E. Avci +2 more | 2022-05-17 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal +1 more | 2022-05-10 |
| 11302777 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2022-04-12 |
| 11296203 | Switching device having gate stack with low oxide growth | Cheng-Ying Huang, Gilbert Dewey | 2022-04-05 |
| 11276694 | Transistor structure with indium phosphide channel | Matthew V. Metz, Gilbert Dewey, Nicholas G. Minutillo, Cheng-Ying Huang, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11276755 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11264512 | Thin film transistors having U-shaped features | Gilbert Dewey, Aaron D. Lilak, Van H. Le, Abhishek A. Sharma, Tahir Ghani +6 more | 2022-03-01 |
| 11257904 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more | 2022-02-22 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Zachary Geiger +5 more | 2022-02-08 |
| 11239232 | Isolation walls for vertically stacked transistor structures | Aaron D. Lilak, Patrick Morrow, Gilbert Dewey, Rishabh Mehandru | 2022-02-01 |