Issued Patents 2021
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205724 | Self-aligned gate hard mask and method forming same | Kai-Hsuan Lee, Bo-Yu Lai, Sheng-Chen Wang, Sai-Hooi Yeong, Chi On Chui | 2021-12-21 |
| 11201228 | Semiconductor device with air-spacer | Wei-Yang Lee, Feng-Cheng Yang, Chung-Te Lin | 2021-12-14 |
| 11195951 | Semiconductor device with self-aligned wavy contact profile and method of forming the same | Chia-Ta Yu, Yen-Chieh Huang, Wei-Yuan Lu, Feng-Cheng Yang | 2021-12-07 |
| 11189538 | Semiconductor structure with polyimide packaging and manufacturing method | Chih-Fan Huang, Mao-Nan Wang, Kuo-Chin Chang, Hui-Chi Chen, Dian-Hau Chen | 2021-11-30 |
| 11189705 | Methods of reducing parasitic capacitance in multi-gate field-effect transistors | I-Hsieh Wong, Wei-Yang Lee, Feng-Cheng Yang | 2021-11-30 |
| 11177211 | Method of manufacturing via structures of semiconductor devices | Kuo-Yen Liu, Boo Yeh, Min-Chang Liang, Jui-Yao Lai, Sai-Hooi Yeong +1 more | 2021-11-16 |
| 11158509 | Pattern fidelity enhancement with directional patterning technology | Yu-Tien Shen, Chi-Cheng Hung, Chin-Hsiang Lin, Chien-Wei Wang, Ching-Yu Chang +7 more | 2021-10-26 |
| 11152486 | FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance | Cheng-Yu Yang, Kai-Hsuan Lee, Wei-Yang Lee, Fu-Kai Yang | 2021-10-19 |
| 11145564 | Multi-layer passivation structure and method | Chih-Fan Huang, Hui-Chi Chen, Kuo-Chin Chang, Dian-Hau Chen | 2021-10-12 |
| 11133229 | Forming transistor by selectively growing gate spacer | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai +4 more | 2021-09-28 |
| 11107735 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2021-08-31 |
| 11088245 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2021-08-10 |
| 11088022 | Different isolation liners for different type FinFETs and associated isolation feature fabrication | Tzung-Yi Tsai, Tsung-Lin Lee | 2021-08-10 |
| 11088030 | Semiconductor device and a method for fabricating the same | Jui-Yao Lai, Ru-Gun Liu, Sai-Hooi Yeong, Yung-Sung Yen, Ying-Yan Chen | 2021-08-10 |
| 11056556 | Metal-insulator-metal capacitive structure and methods of fabricating thereof | Hsiang-Ku Shen, Ming-Hong Kao, Hui-Chi Chen, Dian-Hau Chen | 2021-07-06 |
| 11043425 | Methods of reducing parasitic capacitance in semiconductor devices | Kai-Hsuan Lee, Feng-Cheng Yang, Sai-Hooi Yeong | 2021-06-22 |
| 11031458 | Metal-insulator-metal (MIM) capacitor structure and method for forming the same | Chih-Fan Huang, Chih-Yang Pai, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Hui-Chi Chen +1 more | 2021-06-08 |
| 11018245 | Epitaxial structures for fin-like field effect transistors | Chia-Ta Yu, Sheng-Chen Wang, Feng-Cheng Yang, Sai-Hooi Yeong | 2021-05-25 |
| 11018224 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su +2 more | 2021-05-25 |
| 10991800 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee +2 more | 2021-04-27 |
| 10985167 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2021-04-20 |
| 10923565 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin | 2021-02-16 |
| 10916475 | Semiconductor device and a method for fabricating the same | Jui-Yao Lai, Ying-Yan Chen, Sai-Hooi Yeong, Yung-Sung Yen, Ru-Gun Liu | 2021-02-09 |