Issued Patents 2021
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201228 | Semiconductor device with air-spacer | Wei-Yang Lee, Chung-Te Lin, Yen-Ming Chen | 2021-12-14 |
| 11195951 | Semiconductor device with self-aligned wavy contact profile and method of forming the same | Chia-Ta Yu, Yen-Chieh Huang, Wei-Yuan Lu, Yen-Ming Chen | 2021-12-07 |
| 11189705 | Methods of reducing parasitic capacitance in multi-gate field-effect transistors | I-Hsieh Wong, Wei-Yang Lee, Yen-Ming Chen | 2021-11-30 |
| 11133229 | Forming transistor by selectively growing gate spacer | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai +4 more | 2021-09-28 |
| 11107735 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2021-08-31 |
| 11107734 | Semiconductor device and manufacturing method thereof | Wei-Yang Lee, Ting-Yeh Chen | 2021-08-31 |
| 11088245 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2021-08-10 |
| 11062957 | FinFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Chia-Ta Yu, Kai-Hsuan Lee, Sai-Hooi Yeong | 2021-07-13 |
| 11063152 | Semiconductor device and method | Chien-Wei Lee, Hsueh-Chang Sung, Yen-Ru Lee, Jyun-Chih Lin, Tzu-Hsiang Hsu | 2021-07-13 |
| 11043425 | Methods of reducing parasitic capacitance in semiconductor devices | Kai-Hsuan Lee, Yen-Ming Chen, Sai-Hooi Yeong | 2021-06-22 |
| 11031498 | Semiconductor structure with improved source drain epitaxy | Wei-Yang Lee, Tzu-Hsiang Hsu, Ting-Yeh Chen | 2021-06-08 |
| 11018224 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su +2 more | 2021-05-25 |
| 11018245 | Epitaxial structures for fin-like field effect transistors | Chia-Ta Yu, Sheng-Chen Wang, Yen-Ming Chen, Sai-Hooi Yeong | 2021-05-25 |
| 11018134 | Semiconductor device and method for manufacturing the same | Chung-Te Lin, Wei-Yuan Lu | 2021-05-25 |
| 11011634 | Elongated source/drain region structure in finFET device | Wei-Yang Lee, Ting-Yeh Chen, Chii-Horng Li | 2021-05-18 |
| 10985167 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2021-04-20 |
| 10950730 | Merged source/drain features | Chun-An Lin, Wei-Yuan Lu, Tzu-Ching Lin, Li-Li Su | 2021-03-16 |
| 10923565 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Yih-Ann Lin, Yen-Ming Chen | 2021-02-16 |