Issued Patents 2021
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205724 | Self-aligned gate hard mask and method forming same | Bo-Yu Lai, Sheng-Chen Wang, Sai-Hooi Yeong, Yen-Ming Chen, Chi On Chui | 2021-12-21 |
| 11189706 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2021-11-30 |
| 11152486 | FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance | Cheng-Yu Yang, Wei-Yang Lee, Fu-Kai Yang, Yen-Ming Chen | 2021-10-19 |
| 11133229 | Forming transistor by selectively growing gate spacer | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai, Bo-Cyuan Lu +4 more | 2021-09-28 |
| 11081395 | Fin field effect transistor having air gap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2021-08-03 |
| 11062957 | FinFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Chia-Ta Yu, Sai-Hooi Yeong, Feng-Cheng Yang | 2021-07-13 |
| 11043425 | Methods of reducing parasitic capacitance in semiconductor devices | Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong | 2021-06-22 |
| 10985167 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2021-04-20 |
| 10971408 | Contact air gap formation and structures thereof | Sai-Hooi Yeong | 2021-04-06 |
| 10923565 | Self-aligned contact air gap formation | Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen | 2021-02-16 |