Issued Patents 2021
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11158508 | Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure | Tsung-Yao Wen, Sheng-Chen Wang, Sai-Hooi Yeong, Hsueh-Chang Sung | 2021-10-26 |
| 10991800 | Method for FinFET LDD doping | Chun Hsiung Tsai, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee, Kuo-Feng Yu +2 more | 2021-04-27 |