Issued Patents 2021
Showing 76–100 of 103 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10937648 | Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS | Ruqiang Bao, Gen Tsutsui, Dechao Guo | 2021-03-02 |
| 10930758 | Space deposition between source/drain and sacrificial layers | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2021-02-23 |
| 10930793 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Chun Wing Yeung, Jingyun Zhang | 2021-02-23 |
| 10930762 | Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth | Takashi Ando, Pouya Hashemi | 2021-02-23 |
| 10930567 | Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact | Shogo Mochizuki, Chun Wing Yeung, Hemanth Jagannathan | 2021-02-23 |
| 10923403 | Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation | Takashi Ando, Pouya Hashemi | 2021-02-16 |
| 10916432 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Vijay Narayanan | 2021-02-09 |
| 10916659 | Asymmetric threshold voltage FinFET device by partial channel doping variation | Alexander Reznicek, Pouya Hashemi, Takashi Ando, Jingyun Zhang | 2021-02-09 |
| 10916649 | Vertical field effect transistor with reduced external resistance | Juntao Li, Kangguo Cheng, Peng Xu | 2021-02-09 |
| 10916638 | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance | Kangguo Cheng, Shogo Mochizuki, Juntao Li | 2021-02-09 |
| 10916633 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2021-02-09 |
| 10910494 | Method and structure for forming vertical transistors with various gate lengths | Kangguo Cheng, Shogo Mochizuki, Juntao Li | 2021-02-02 |
| 10910273 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Nicolas Loubet, Richard A. Conti | 2021-02-02 |
| 10903339 | Vertical transport FET devices having a sacrificial doped layer | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2021-01-26 |
| 10903318 | External resistance reduction with embedded bottom source/drain for vertical transport FET | Reinaldo Vega, Jingyun Zhang, Miaomiao Wang | 2021-01-26 |
| 10896965 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Jingyun Zhang, Takashi Ando, Pouya Hashemi | 2021-01-19 |
| 10896962 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Alexander Reznicek, Jingyun Zhang, Pouya Hashemi | 2021-01-19 |
| 10892324 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Peng Xu | 2021-01-12 |
| 10892368 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2021-01-12 |
| 10892339 | Gate first technique in vertical transport FET using doped silicon gates with silicide | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Sanjay C. Mehta, Vijay Narayanan | 2021-01-12 |
| 10892336 | Wrap-around-contact structure for top source/drain in vertical FETS | Christopher J. Waskiewicz, Alexander Reznicek, Hemanth Jagannathan | 2021-01-12 |
| 10892325 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Peng Xu | 2021-01-12 |
| 10892195 | Method and structure for forming a vertical field-effect transistor using a replacement metal gate process | Kangguo Cheng, Kisik Choi | 2021-01-12 |
| 10886183 | Method and structure for forming a vertical field-effect transistor using a replacement metal gate process | Kangguo Cheng, Kisik Choi | 2021-01-05 |
| 10886376 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Jingyun Zhang, Takashi Ando, Pouya Hashemi | 2021-01-05 |