Issued Patents 2021
Showing 26–50 of 103 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11088279 | Channel strain formation in vertical transport FETS with dummy stressor materials | Kangguo Cheng, Shogo Mochizuki, Juntao Li | 2021-08-10 |
| 11081567 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Chun Wing Yeung, Robin Hsin Kuo Chao, Heng Wu | 2021-08-03 |
| 11081404 | Source/drain for gate-all-around devices | Jingyun Zhang, Alexander Reznicek, Takashi Ando | 2021-08-03 |
| 11075273 | Nanosheet electrostatic discharge structure | Alexander Reznicek, Xin Miao, Jingyun Zhang | 2021-07-27 |
| 11075301 | Nanosheet with buried gate contact | Jingyun Zhang, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2021-07-27 |
| 11069686 | Techniques for enhancing vertical gate-all-around FET performance | Injo Ok, Soon-Cheon Seo, Seyoung Kim | 2021-07-20 |
| 11069577 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Juntao Li, Peng Xu | 2021-07-20 |
| 11063129 | Self-limiting fin spike removal | Kangguo Cheng, Juntao Li, Peng Xu | 2021-07-13 |
| 11063134 | Vertical transistors with top spacers | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2021-07-13 |
| 11062955 | Vertical transistors having uniform channel length | Takashi Ando, Jingyun Zhang, Alexander Reznicek, Pouya Hashemi | 2021-07-13 |
| 11063147 | Forming bottom source and drain extension on vertical transport FET (VTFET) | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2021-07-13 |
| 11049979 | Long channel nanosheet FET having tri-layer spacers | Xin Miao, Ruilong Xie, Jingyun Zhang | 2021-06-29 |
| 11043598 | Vertical field effect transistor with low-resistance bottom source-drain contact | Soon-Cheon Seo, Injo Ok, Alexander Reznicek | 2021-06-22 |
| 11037832 | Threshold voltage adjustment by inner spacer material selection | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-06-15 |
| 11037986 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2021-06-15 |
| 11038064 | Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel | Injo Ok, Soon-Cheon Seo | 2021-06-15 |
| 11031295 | Gate cap last for self-aligned contact | Chanro Park, Kangguo Cheng, Ruilong Xie | 2021-06-08 |
| 11024724 | Vertical FET with differential top spacer | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-06-01 |
| 11024740 | Asymmetric channel threshold voltage | Takashi Ando, Alexander Reznicek, Jingyun Zhang, Pouya Hashemi | 2021-06-01 |
| 11018192 | Reduction of metal resistance in vertical ReRAM cells | Takashi Ando, Pouya Hashemi | 2021-05-25 |
| 11018062 | Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-05-25 |
| 11011617 | Formation of a partial air-gap spacer | Kangguo Cheng, Heng Wu, Peng Xu | 2021-05-18 |
| 11011624 | Vertical transport field-effect transistor (VFET) with dual top spacer | Shogo Mochizuki, Michael P. Belyansky | 2021-05-18 |
| 11008428 | Polymer composite strengthened with carbon fiber surface-modified by plasma treatment and method for producing polymer composite | Dae-Soon Lim, Eung Seok Lee | 2021-05-18 |
| 10991584 | Methods and structures for cutting lines or spaces in a tight pitch structure | Peng Xu, Kangguo Cheng, Juntao Li | 2021-04-27 |