SJ

Syun-Ming Jang

TSMC: 37 patents #1 of 614Top 1%
Overall (2002): #44 of 266,432Top 1%
37
Patents 2002

Issued Patents 2002

Showing 1–25 of 37 patents

Patent #TitleCo-InventorsDate
6500753 Method to reduce the damages of copper lines Ying-Ho Chen, Jih-Churng Twu, Chen-Hua Yu 2002-12-31
6495478 Reduction of shrinkage of poly(arylene ether) for low-K IMD 2002-12-17
6483173 Solution to black diamond film delamination problem Lain-Jong Li, Shwangming Jeng 2002-11-19
6479385 Interlevel dielectric composite layer for insulation of polysilicon and metal structures Chu-Yun Fu 2002-11-12
6472312 Methods for inhibiting microelectronic damascene processing induced low dielectric constant dielectric layer physical degradation Tien-I Bao, Weng Chang 2002-10-29
6458689 Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish Chen-Hua Yu, Tsu Shih, Anthony Yen, Jih-Chuyng Twu 2002-10-01
6455417 Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer Tien-I Bao 2002-09-24
6444371 Prevention of die loss to chemical mechanical polishing Jui-Yu Chang, Chen-Hua Yu, Chung-Long Chang, Tsu Shih, Jeng-Horng Chen 2002-09-03
6436771 Method of forming a semiconductor device with multiple thickness gate dielectric layers Chen-Hua Yu, Mong-Song Liang 2002-08-20
6429118 Elimination of electrochemical deposition copper line damage for damascene processing Ying-Ho Chen, Jih-Churng Twu, Tsu Shih 2002-08-06
6423625 Method of improving the bondability between Au wires and Cu bonding pads Mong-Song Liang, Chen-Hua Yu, Chung-Shi Liu, Jane-Bai Lai 2002-07-23
6424038 Low dielectric constant microelectronic conductor structure with enhanced adhesion and attenuated electrical leakage Tien-I Bao 2002-07-23
6423653 Reduction of plasma damage for HDP-CVD PSG process Chu-Yun Fu 2002-07-23
6422929 Polishing pad for a linear polisher and method for forming Ying-Ho Chen 2002-07-23
6417106 Underlayer liner for copper damascene in low k dielectric Jih-Churng Twu, Ying-Ho Chen, Tsu Shih 2002-07-09
6417071 Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity 2002-07-09
6409587 Dual-hardness polishing pad for linear polisher and method for fabrication Tsu Shih, Ying-Ho Chen, Wen-Chih Chiou 2002-06-25
6407013 Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties Lain-Jong Li, Tien-I Bao, Cheng-Chung Lin 2002-06-18
6403432 Hardmask for a salicide gate process with trench isolation Chen-Hua Yu 2002-06-11
6398627 Slurry dispenser having multiple adjustable nozzles Wen-Chih Chiou, Ying-Ho Chen, Tsu Shih 2002-06-04
6391792 Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer Juing-Yi Cheng, Chung-Long Chang 2002-05-21
6391777 Two-stage Cu anneal to improve Cu damascene process Ying-Ho Chen 2002-05-21
6387775 Fabrication of MIM capacitor in copper damascene process Mong-Song Liang 2002-05-14
6383930 Method to eliminate copper CMP residue of an alignment mark for damascene processes Ying-Ho Chen, Wen-Chih Chiou, Tsu Shih 2002-05-07
6376377 Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity Weng Chang, Ying-Ho Chen, Jih-Churng Twu 2002-04-23