Issued Patents 2002
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6372664 | Crack resistant multi-layer dielectric layer and method for formation thereof | Chu-Yun Fu, Chen-Hua Yu | 2002-04-16 |
| 6368952 | Diffusion inhibited dielectric structure for diffusion enhanced conductor layer | Mong-Song Liang | 2002-04-09 |
| 6365523 | Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers | Chu-Yun Fu, Ying-Ho Chen | 2002-04-02 |
| 6362093 | Dual damascene method employing sacrificial via fill layer | Anthony Yen, Hung-Chang Hsieh | 2002-03-26 |
| 6362085 | Method for reducing gate oxide effective thickness and leakage current | Mo Yu, Chen-Hua Yu | 2002-03-26 |
| 6358839 | Solution to black diamond film delamination problem | Lain-Jong Li, Shwangming Jeng | 2002-03-19 |
| 6358841 | Method of copper CMP on low dielectric constant HSQ material | Tien-I Bao | 2002-03-19 |
| 6358119 | Way to remove CU line damage after CU CMP | Tsu Shih, Jih-Churng Twu, Ying-Ho Chen | 2002-03-19 |
| 6350364 | Method for improvement of planarity of electroplated copper | — | 2002-02-26 |
| 6350694 | Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials | Weng Chang, Tien-I Bao | 2002-02-26 |
| 6350693 | Method of CMP of polysilicon | Chung-Long Chang | 2002-02-26 |
| 6346476 | Method for enhancing line-to-line capacitance uniformity of plasma enhanced chemical vapor deposited (PECVD) inter-metal dielectric (IMD) layers | Weng Chang | 2002-02-12 |