Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7833853 | Method of defining gate structure height for semiconductor devices | Ryan Chia-Jen Chen, Yih-Ann Lin, Joseph Lin, Jr-Jung Lin, Yu-Chao Lin +1 more | 2010-11-16 |
| 7829949 | High-K dielectric metal gate device structure | Joshua Tseng, Kang-Cheng Lin, Ji-Yi Yang, Ryan Chia-Jen Chen | 2010-11-09 |
| 7812414 | Hybrid process for forming metal gates | Yong-Tian Hou, Peng-Fu Hsu, Jin Ying, Kang-Cheng Lin, Tze-Liang Lee | 2010-10-12 |
| 7811892 | Multi-step annealing process | Yun-Ren Wang, Ying-Wei Yen, Chien-Hua Lung, Shu-Yen Chan | 2010-10-12 |
| 7709316 | Method of fabricating gate structure | Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan | 2010-05-04 |
| 7625791 | High-k dielectric metal gate device structure and method for forming the same | Joshua Tseng, Kang-Cheng Lin, Ji-Yi Yang, Ryan Chia-Jen Chen | 2009-12-01 |
| 7553763 | Salicide process utilizing a cluster ion implantation process | Tsai-Fu Hsiao, Chin-Cheng Chien | 2009-06-30 |
| 7435640 | Method of fabricating gate structure | Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan | 2008-10-14 |
| 7265065 | Method for fabricating dielectric layer doped with nitrogen | Yun-Ren Wang, Ying-Wei Yen, Chien-Hua Lung | 2007-09-04 |
| 7214631 | Method of forming gate dielectric layer | Yu-Ren Wang, Ying-Wei Yen, Liyuan Cheng | 2007-05-08 |
| 6555425 | Method for manufacturing transistor | Ellen Cheng | 2003-04-29 |
| 6555485 | Method for fabricating a gate dielectric layer | Chuan Liu, Hsiu-Shan Lin, Yu-Yin Lin, Tung-Ming Pan | 2003-04-29 |
| 6479344 | Method of fabricating DRAM capacitor | Wen-Yi Hsieh, Tri-Rung Yew | 2002-11-12 |
| 6455389 | Method for preventing a by-product ion moving from a spacer | Chao Lin, Li-Wei Cheng | 2002-09-24 |
| 6403411 | Method for manufacturing lower electrode of DRAM capacitor | Chih-Hsun Chu, Horng-Nan Chern, Kevin Lin, Wen-Yi Hsieh, Tri-Rung Yew | 2002-06-11 |
| 6368923 | Method of fabricating a dual metal gate having two different gate dielectric layers | — | 2002-04-09 |
| 6291295 | Method of forming a storage electrode of a capacitor on an ion-implanted isolation layer | Tri-Rung Yew, Water Lur | 2001-09-18 |
| 6291288 | Method of fabricating a thin and structurally-undefective dielectric structure for a storage capacitor in dynamic random-access memory | Tri-Rung Yew | 2001-09-18 |
| 6251769 | Method of manufacturing contact pad | Tri-Rung Yew, Water Lur | 2001-06-26 |
| 6251783 | Method of manufacturing shallow trench isolation | Tri-Rung Yew, Gwo-Shii Yang, Water Lur | 2001-06-26 |
| 6235606 | Method of fabricating shallow trench isolation | Michael W C Huang, Hsiao-Ling Lu, Tri-Rung Yew | 2001-05-22 |
| 6225160 | Method of manufacturing bottom electrode of capacitor | Kuo-Chi Lin, Da-Wen Shia, Kun-Chi Lin | 2001-05-01 |
| 6221712 | Method for fabricating gate oxide layer | Michael W C Huang, Tri-Rung Yew | 2001-04-24 |
| 6218238 | Method of fabricating DRAM capacitor | Wen-Yi Hsieh, Tri-Rung Yew | 2001-04-17 |
| 6207497 | Conformity of ultra-thin nitride deposition for DRAM capacitor | Juan-Yuan Wu | 2001-03-27 |