Issued Patents All Time
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6200844 | Method of manufacturing dielectric film of capacitor in dynamic random access memory | — | 2001-03-13 |
| 6174765 | Method of reducing leakage current in dielectric | Wen-Yi Hsieh | 2001-01-16 |
| 6156600 | Method for fabricating capacitor in integrated circuit | Fang-Ching Chao, Wen-Yi Hsieh | 2000-12-05 |
| 6146941 | Method for fabricating a capacitor in a semiconductor device | Wen-Yi Hsieh, Tri-Rung Yew | 2000-11-14 |
| 6133086 | Fabrication method of a tantalum pentoxide dielectric layer for a DRAM capacitor | Tri-Rung Yew | 2000-10-17 |
| 6087262 | Method for manufacturing shallow trench isolation structure | Gwo-Shii Yang, Tri-Rung Yew, Water Lur | 2000-07-11 |
| 6083789 | Method for manufacturing DRAM capacitor | Wen-Yi Hsieh, Tri-Rung Yew | 2000-07-04 |
| 6078492 | Structure of a capacitor in a semiconductor device having a self align contact window which has a slanted sidewall | Wen-Yi Hsieh, Tri-Rung Yew | 2000-06-20 |
| 6057189 | Method of fabricating capacitor utilizing an ion implantation method | Wen-Yi Hsieh, Wen-Kuan Yeh, Tri-Rung Yew | 2000-05-02 |
| 6037206 | Method of fabricating a capacitor of a dynamic random access memory | Hsi-Ta Chuang, Tri-Rung Yew | 2000-03-14 |
| 5994183 | Method for forming charge storage structure | Wen-Yi Hsieh, Tri-Rung Yew | 1999-11-30 |
| 5976951 | Method for preventing oxide recess formation in a shallow trench isolation | Chih-Hsiang Hsiao, Chao-Yen Chen | 1999-11-02 |
| 5956598 | Method for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuit | Gwo-Shii Yang, Tri-Rung Yew, Water Lur | 1999-09-21 |
| 5895254 | Method of manufacturing shallow trench isolation structure | Tony Lin, Water Lur | 1999-04-20 |
| D371289 | Knife-handle | — | 1996-07-02 |