| 5262610 |
Low particulate reliability enhanced remote microwave plasma discharge device |
Steve S. Huang, Cecil J. Davis, Lee M. Loewenstein |
1993-11-16 |
|
| 5248636 |
Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
Cecil J. Davis, Joseph D. Luttmer, Rudy L. York, Lee M. Loewenstein, Robert T. Matthews +1 more |
1993-09-28 |
$7,109,000 |
| 5138973 |
Wafer processing apparatus having independently controllable energy sources |
Cecil J. Davis, Joseph D. Luttmer, Rudy L. York, Lee M. Loewenstein, Robert T. Matthews +1 more |
1992-08-18 |
$1,759,000 |
| 4997520 |
Method for etching tungsten |
Cecil J. Davis, Duane E. Carter, Jeff D. Achenbach |
1991-03-05 |
$5,116,000 |
| 4988644 |
Method for etching semiconductor materials using a remote plasma generator |
Cecil J. Davis, Steve S. Huang, Lee M. Loewenstein, Jeff D. Achenbach |
1991-01-29 |
$3,121,000 |
| 4923562 |
Processing of etching refractory metals |
Cecil J. Davis |
1990-05-08 |
$4,307,000 |
| 4915777 |
Method for etching tungsten |
Monte A. Douglas, Cecil J. Davis |
1990-04-10 |
$2,555,000 |
| 4911103 |
Processing apparatus and method |
Cecil J. Davis, Dean W. Freeman, Robert T. Matthews, Joel T. Tomlin |
1990-03-27 |
$1,708,000 |
| 4891488 |
Processing apparatus and method |
Cecil J. Davis |
1990-01-02 |
$2,365,000 |
| 4891087 |
Isolation substrate ring for plasma reactor |
Cecil J. Davis, John E. Spencer, Thomas D. Bonifield, William J. Stiltz, Randall E. Johnson +2 more |
1990-01-02 |
$2,365,000 |
| 4886570 |
Processing apparatus and method |
Cecil J. Davis, Robert T. Matthews, Lee M. Loewenstein, Randall C. Hildenbrand, John I. Jones |
1989-12-12 |
$2,603,000 |
| 4878994 |
Method for etching titanium nitride local interconnects |
Cecil J. Davis, Tom Tang, Lee M. Loewenstein |
1989-11-07 |
$1,534,000 |
| 4874723 |
Selective etching of tungsten by remote and in situ plasma generation |
Duane E. Carter, Cecil J. Davis, Sue Crank |
1989-10-17 |
$1,450,000 |
| 4867841 |
Method for etch of polysilicon film |
Lee M. Loewenstein, Cecil J. Davis |
1989-09-19 |
$1,367,000 |
| 4863558 |
Method for etching tungsten |
Cecil J. Davis, Sue Crank |
1989-09-05 |
$1,503,000 |
| 4855016 |
Method for etching aluminum film doped with copper |
Cecil J. Davis, Lee M. Loewenstein |
1989-08-08 |
$1,135,000 |
| 4849067 |
Method for etching tungsten |
Cecil J. Davis, Duane E. Carter, Sue Crank, John I. Jones |
1989-07-18 |
$2,231,000 |
| 4849068 |
Apparatus and method for plasma-assisted etching |
Cecil J. Davis, Duane E. Carter |
1989-07-18 |
$2,231,000 |
| 4842676 |
Process for etch of tungsten |
Cecil J. Davis, Lee M. Loewenstein |
1989-06-27 |
$1,908,000 |
| 4842686 |
Wafer processing apparatus and method |
Cecil J. Davis, Lee M. Loewenstein, Robert T. Matthews, John I. Jones |
1989-06-27 |
$1,908,000 |
| 4842687 |
Method for etching tungsten |
Cecil J. Davis |
1989-06-27 |
$1,908,000 |
| 4838990 |
Method for plasma etching tungsten |
Cecil J. Davis, John I. Jones |
1989-06-13 |
$1,830,000 |
| 4838984 |
Method for etching films of mercury-cadmium-telluride and zinc sulfid |
Joseph D. Luttmer, Cecil J. Davis, Patricia B. Smith, Rudy L. York, Lee M. Loewenstein |
1989-06-13 |
$1,830,000 |
| 4828649 |
Method for etching an aluminum film doped with silicon |
Cecil J. Davis, Lee M. Loewenstein |
1989-05-09 |
$1,812,000 |
| 4822450 |
Processing apparatus and method |
Cecil J. Davis, Lee M. Loewenstein, Robert T. Matthews, Randall C. Hildenbrand, Dean W. Freeman +1 more |
1989-04-18 |
$2,924,000 |