HA

Husam N. Alshareef

TI Texas Instruments: 31 patents #311 of 12,488Top 3%
SI Saudi Basic Industries: 4 patents #89 of 474Top 20%
SB Sabic Global Technologies B.V.: 2 patents #558 of 1,595Top 35%
SE Sematech: 1 patents #38 of 123Top 35%
📍 Sachse, TX: #6 of 446 inventorsTop 2%
🗺 Texas: #2,117 of 125,132 inventorsTop 2%
Overall (All Time): #67,654 of 4,157,543Top 2%
44
Patents All Time

Issued Patents All Time

Showing 26–44 of 44 patents

Patent #TitleCo-InventorsDate
7906441 System and method for mitigating oxide growth in a gate dielectric Malcolm J. Bevan, Haowen Bu, Hiroaki Niimi 2011-03-15
7858459 Work function adjustment with the implant of lanthanides Manfred Ramin, Michael F. Pas 2010-12-28
7807522 Lanthanide series metal implant to control work function of metal gate electrodes Manfred Ramin, Michael F. Pas 2010-10-05
7799669 Method of forming a high-k gate dielectric layer Manfred Ramin, Michael F. Pas 2010-09-21
7682988 Thermal treatment of nitrided oxide to improve negative bias thermal instability Rajesh Khamankar, Ajith Varghese, Cathy Chancellor, Anand Krishnan, Malcolm J. Bevan 2010-03-23
7582521 Dual metal gates for mugfet device Weize Xiong 2009-09-01
7514308 CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers Ajith Varghese, Rajesh Khamankar 2009-04-07
7402524 Post high voltage gate oxide pattern high-vacuum outgas surface treatment Brian K. Kirkpatrick, Rajesh Khamankar, Malcolm J. Bevan, April Gurba, Clinton L. Montgomery +1 more 2008-07-22
7345001 Gate dielectric having a flat nitrogen profile and method of manufacture therefor Hiroaki Niimi, Rajesh Khamankar, Toan Tran 2008-03-18
7339240 Dual-gate integrated circuit semiconductor device Brian K. Kirkpatrick, Rajesh Khamankar, Malcolm J. Bevan, April Gurba, Clinton L. Montgomery +1 more 2008-03-04
7332433 Methods of modulating the work functions of film layers Kisik Choi, Prashant Majhi 2008-02-19
7226826 Semiconductor device having multiple work functions and method of manufacture therefor Mark Visokay, Antonio Luis Pacheco Rotondaro, Luigi Colombo 2007-06-05
7227201 CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers Ajith Varghese, Rajesh Khamankar 2007-06-05
7087440 Monitoring of nitrided oxide gate dielectrics by determination of a wet etch April Gurba, Hiroaki Niimi 2006-08-08
7049242 Post high voltage gate dielectric pattern plasma surface treatment Brian K. Kirkpatrick, Rajesh Khamankar, Malcolm J. Bevan, April Gurba, Clinton L. Montgomery +1 more 2006-05-23
7018925 Post high voltage gate oxide pattern high-vacuum outgas surface treatment Brian K. Kirkpatrick, Rajesh Khamankar, Malcolm J. Bevan, April Gurba, Clinton L. Montgomery +1 more 2006-03-28
6924239 Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation Hiroaki Niimi, Ajith Varghese 2005-08-02
6921703 System and method for mitigating oxide growth in a gate dielectric Malcolm J. Bevan, Haowen Bu, Hiroaki Niimi 2005-07-26
6730566 Method for non-thermally nitrided gate formation for high voltage devices Hiroaki Niimi, Rajesh Khamankar 2004-05-04