CL

Chi-Wen Liu

TSMC: 253 patents #44 of 12,232Top 1%
NU National Taiwan University: 15 patents #22 of 2,195Top 2%
NU National Chiao Tung University: 3 patents #170 of 1,517Top 15%
AC Asustek Computer: 2 patents #383 of 1,430Top 30%
ME Medicustek: 1 patents #10 of 21Top 50%
TE The Eastern: 1 patents #60 of 119Top 55%
Overall (All Time): #1,732 of 4,157,543Top 1%
264
Patents All Time

Issued Patents All Time

Showing 251–264 of 264 patents

Patent #TitleCo-InventorsDate
7125802 CMP process leaving no residual oxide layer or slurry particles Ying-Lang Wang, Shih-Chi Lin, Yi-Lung Cheng, Ming-Hua Yoo, Wen-Kung Cheng +1 more 2006-10-24
7122471 Method for preventing voids in metal interconnects Jung-Chih Tsao, Si-Kua Cheng, Che-Tsao Wang, Steven Lin, Hsien-Ping Feng +1 more 2006-10-17
7071100 Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene process Kei-Wei Chen, Jung-Chih Tsao, Jchung-Chang Chen, Shih-Tzung Chang, Shih-Ho Lin +2 more 2006-07-04
7030016 Post ECP multi-step anneal/H2 treatment to reduce film impurity Hsien-Ping Feng, Jung-Chih Tsao, Hsi-Kuei Cheng, Chih-Tsung Lee, Ming-Yuan Cheng +2 more 2006-04-18
6979656 Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same Shiu-Ko JangJian, Jun Wu, Ying-Lung Wang, Yi-Lung Cheng, Michael Chang +1 more 2005-12-27
6903011 Displacement method to grow cu overburden Ying-Lang Wang 2005-06-07
6903019 CMP process leaving no residual oxide layer or slurry particles Ying-Lang Wang, Shih-Chi Lin, Yi-Lung Cheng, Ming-Hua Yoo, Wen-Kung Cheng +1 more 2005-06-07
6825120 Metal surface and film protection method to prolong Q-time after metal deposition Ying-Lang Wang 2004-11-30
6705923 Chemical mechanical polisher equipped with chilled wafer holder and polishing pad and method of using Ying Wan 2004-03-16
6673661 Self-aligned method for forming dual gate thin film transistor (TFT) device Ting-Chang Chang, Po-Tsun Liu, Ying-Lang Wang 2004-01-06
6670274 Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure Ying-Lang Wang 2003-12-30
6660638 CMP process leaving no residual oxide layer or slurry particles Ying-Lang Wang, Shih-Chi Lin, Yi-Lung Cheng, Ming-Hua Yoo, Wen-Kung Cheng +1 more 2003-12-09
6211024 Method for forming a semiconductor device by using multiple ion implantation sequence to reduce crystal defects and to allow the reduction of the temperature used for a subsequent rapid thermal anneal procedure Kou-Yu Chou 2001-04-03
6156660 Method of planarization using dummy leads Chia-Shiung Tsai, Jing-Meng Liu, Tsu Shih 2000-12-05