Issued Patents All Time
Showing 201–225 of 264 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9337303 | Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer | Shiu-Ko JangJian, Chi-Cherng Jeng, Ting-Chun Wang | 2016-05-10 |
| 9337263 | Semiconductor device including a semiconductor sheet unit interconnecting a source and a drain | Jiun-Peng Wu, Tetsu Ohtou, Ching-Wei Tsai, Chih-Hao Wang | 2016-05-10 |
| 9331075 | Systems and methods for fabricating semiconductor devices at different levels | Chao-Hsiung Wang | 2016-05-03 |
| 9331179 | Metal gate and gate contact structure for FinFET | Chao-Hsiung Wang | 2016-05-03 |
| 9318431 | Integrated circuit having a MOM capacitor and method of making same | Chao-Hsiung Wang | 2016-04-19 |
| 9318367 | FinFET structure with different fin heights and method for forming the same | Yu-Lien Huang, Chi Kang Liu | 2016-04-19 |
| 9312354 | Contact etch stop layers of a field effect transistor | Chao-Hsiung Wang | 2016-04-12 |
| 9312363 | Multi-fin device and method of making same | Chao-Hsiung Wang | 2016-04-12 |
| 9306069 | Isolation structure of fin field effect transistor | Kuo-Cheng Ching, Guan-Lin Chen, Chao-Hsiung Wang | 2016-04-05 |
| 9287262 | Passivated and faceted for fin field effect transistor | Yen-Yu Chen, Chi-Yuan Shih | 2016-03-15 |
| 9287385 | Multi-fin device and method of making same | Chao-Hsiung Wang | 2016-03-15 |
| 9269632 | FinFET device and method of manufacturing same | Chao-Hsiung Wang | 2016-02-23 |
| 9245882 | FinFETs with gradient germanium-containing channels | Kuo-Cheng Ching, Zhiqiang Wu, Jiun-Jia Huang, Chao-Hsiung Wang | 2016-01-26 |
| 9209252 | Formation of nickel silicon and nickel germanium structure at staggered times | Chao-Hsiung Wang | 2015-12-08 |
| 9202691 | Semiconductor device having modified profile metal gate | Yu-Lien Huang, Zhao-Cheng Chen, Ming-Huan Tsai, Clement Hsingjen Wann | 2015-12-01 |
| 9196522 | FinFET with buried insulator layer and method for forming | Kuo-Cheng Ching, Guan-Lin Chen, Chao-Hsiung Wang | 2015-11-24 |
| 9190484 | Vertical tunneling field-effect transistor cell and fabricating the same | Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu | 2015-11-17 |
| 9178065 | Systems and methods for fabricating semiconductor devices at different levels | Chao-Hsiung Wang | 2015-11-03 |
| 9159824 | FinFETs with strained well regions | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-10-13 |
| 9159833 | Fin structure of semiconductor device | Kuo-Cheng Ching, Jiun-Jia Huang, Chao-Hsiung Wang | 2015-10-13 |
| 9147682 | Fin spacer protected source and drain regions in FinFETs | Kuo-Cheng Ching, Ting-Hung Hsu, Chao-Hsiung Wang | 2015-09-29 |
| 9111780 | Structure and method for vertical tunneling field effect transistor with leveled source and drain | Harry-Hak-Lay Chuang, Yi-Ren Chen, Chao-Hsiung Wang, Ming Zhu | 2015-08-18 |
| 9093531 | Fin structure of semiconductor device | Chung-Hsien Chen, Tung Ying Lee, Yu-Lien Huang | 2015-07-28 |
| 9087903 | Buffer layer omega gate | Yu-Lien Huang, Tung Ying Lee, Chung-Hsien Chen | 2015-07-21 |
| 9048317 | Contact structure of semiconductor device | Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Li-Chi Yu, Meng-Chun Chang +2 more | 2015-06-02 |