Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11995390 | Isolation circuit between power domains | Chi-Yu Lu, Ting-Wei Chiang, Hui-Zhong Zhuang, Jerry Chang Jui Kao, Pin-Dai Sue +2 more | 2024-05-28 |
| 11956938 | Semiconductor device and manufacturing method thereof | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Yasutoshi Okuno | 2024-04-09 |
| 11855090 | High performance MOSFETs having varying channel structures | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Chi-Hsing Hsu | 2023-12-26 |
| 11532622 | High performance MOSFETs having different device characteristics | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Chi-Hsing Hsu | 2022-12-20 |
| 11526647 | Isolation circuit between power domains | Chi-Yu Lu, Ting-Wei Chiang, Hui-Zhong Zhuang, Jerry Chang Jui Kao, Pin-Dai Sue +2 more | 2022-12-13 |
| 11393830 | Semiconductor device and manufacturing method thereof | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Yasutoshi Okuno | 2022-07-19 |
| 11075201 | Tuning tensile strain on FinFET | Kuo-Cheng Chiang, Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu | 2021-07-27 |
| 11031395 | Method of forming high performance MOSFETs having varying channel structures | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Chi-Hsing Hsu | 2021-06-08 |
| 10867104 | Isolation circuit between power domains | Chi-Yu Lu, Ting-Wei Chiang, Hui-Zhong Zhuang, Pin-Dai Sue, Jerry Chang Jui Kao +2 more | 2020-12-15 |
| 10658370 | Semiconductor device and manufacturing method thereof | Tetsu Ohtou, Ching-Wei Tsai, Kuan-Lun Cheng, Yasutoshi Okuno | 2020-05-19 |
| 10622480 | Forming gate stacks of FinFETs through oxidation | Kuo-Cheng Chiang, Chao-Hsiung Wang, Chi-Wen Liu | 2020-04-14 |
| 10453842 | Tuning tensile strain on FinFET | Kuo-Cheng Ching, Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu | 2019-10-22 |
| 10340191 | Method of forming a fin structure of semiconductor device | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2019-07-02 |
| 9984938 | Integrate circuit with nanowires | Kuo-Cheng Ching | 2018-05-29 |
| 9947587 | Method of forming fin structure of semiconductor device | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2018-04-17 |
| 9859429 | FinFET device and method of fabricating same | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2018-01-02 |
| 9627385 | Tuning tensile strain on FinFET | Kuo-Cheng Ching, Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu | 2017-04-18 |
| 9455334 | Method of forming a Fin structure of semiconductor device | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2016-09-27 |
| 9355915 | Integrate circuit with nanowires | Kuo-Cheng Ching | 2016-05-31 |
| 9245882 | FinFETs with gradient germanium-containing channels | Kuo-Cheng Ching, Zhiqiang Wu, Chao-Hsiung Wang, Chi-Wen Liu | 2016-01-26 |
| 9159833 | Fin structure of semiconductor device | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2015-10-13 |
| 9153668 | Tuning tensile strain on FinFET | Kuo-Cheng Ching, Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu | 2015-10-06 |
| 9111784 | Integrate circuit with nanowires | Kuo-Cheng Ching | 2015-08-18 |
| 8872161 | Integrate circuit with nanowires | Kuo-Cheng Ching | 2014-10-28 |