Issued Patents All Time
Showing 201–225 of 233 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9356031 | Three dimensional NAND string memory devices with voids enclosed between control gate electrodes | Yao-Sheng Lee, Jayavel Pachamuthu, George Matamis, Johann Alsmeier, Henry Chien | 2016-05-31 |
| 9331090 | Compact three dimensional vertical NAND and method of making thereof | Johann Alsmeier, Xiying Costa, Yanli Zhang | 2016-05-03 |
| 9305849 | Method of making a three dimensional NAND device | Masanori Tsutsumi, Shigehiro Fujino, Sateesh Koka, Senaka Kanakamedala, Yanli Zhang +3 more | 2016-04-05 |
| 9305932 | Methods of making three dimensional NAND devices | Senaka Kanakamedala, Yanli Zhang, Yao-Sheng Lee, Johann Alsmeier, George Matamis | 2016-04-05 |
| 9236396 | Three dimensional NAND device and method of making thereof | Sateesh Koka, Senaka Kanakamedala, Yanli Zhang, Rahul Sharangpani, George Matamis +1 more | 2016-01-12 |
| 9230983 | Metal word lines for three dimensional memory devices | Rahul Sharangpani, George Matamis | 2016-01-05 |
| 9230973 | Methods of fabricating a three-dimensional non-volatile memory device | Jayavel Pachamuthu, Johann Alsmeier, Yao-Sheng Lee | 2016-01-05 |
| 9159739 | Floating gate ultrahigh density vertical NAND flash memory | Yanli Zhang, Yao-Sheng Lee, Senaka Kanakamedala, Rahul Sharangpani, George Matamis +4 more | 2015-10-13 |
| 9099496 | Method of forming an active area with floating gate negative offset profile in FG NAND memory | Ming Tian, Jayavel Pachamuthu, Atsushi Suyama, James Kai, Yao-Sheng Lee +4 more | 2015-08-04 |
| 9093480 | Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device | Yao-Sheng Lee, Johann Alsmeier, Henry Chien, Masanori Terahara, Hirofumi Watatani | 2015-07-28 |
| 9093321 | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device | Johann Alsmeier, Yao-Sheng Lee | 2015-07-28 |
| 9023719 | High aspect ratio memory hole channel contact formation | Jayavel Pachamuthu, Johann Alsmeier, Yao-Sheng Lee | 2015-05-05 |
| 8987089 | Methods of fabricating a three-dimensional non-volatile memory device | Jayavel Pachamuthu, Johann Alsmeier, Yao-Sheng Lee | 2015-03-24 |
| 8987046 | Trap passivation in memory cell with metal oxide switching element | Deepak C. Sekar, Franz Kreupl, Peter Rabkin | 2015-03-24 |
| 8946023 | Method of making a vertical NAND device using sequential etching of multilayer stacks | Yao-Sheng Lee, Jayavel Pachamuthu, Johann Alsmeier, Henry Chien | 2015-02-03 |
| 8933501 | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device | Johann Alsmeier, Yao-Sheng Lee | 2015-01-13 |
| 8878278 | Compact three dimensional vertical NAND and method of making thereof | Johann Alsmeier, Xiying Costa, Yanli Zhang | 2014-11-04 |
| 8878235 | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same | April D. Schricker, Wu-Yi Henry Chien, Kun Hou, Jingyan Zhang, Yibo Nian | 2014-11-04 |
| 8772749 | Bottom electrodes for use with metal oxide resistivity switching layers | Deepak C. Sekar, Franz Kreupl | 2014-07-08 |
| 8758717 | Electrical current-induced structural changes and chemical functionalization of carbon nanotubes | Ramanath Ganapathiraman, Saurabh Agrawal | 2014-06-24 |
| 8737111 | Memory cell with resistance-switching layers | Franz Kreupl, Xiying Costa, James Kai | 2014-05-27 |
| 8658499 | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device | Johann Alsmeier, Yao-Sheng Lee | 2014-02-25 |
| 8520424 | Composition of memory cell with resistance-switching layers | Franz Kreupl, Abhijit Bandyopadhyay, Yung-Tin Chen, Chu-Chen Fu, Wipul Pemsiri Jayasekara +4 more | 2013-08-27 |
| 8435831 | Non-volatile storage with metal oxide switching element and methods for fabricating the same | Deepak C. Sekar, Franz Kreupl, Peter Rabkin | 2013-05-07 |
| 8436447 | Memory cell that includes a carbon-based memory element and methods of forming the same | Pankaj Kalra | 2013-05-07 |