Issued Patents All Time
Showing 26–50 of 102 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10559501 | Self-aligned quadruple patterning process for Fin pitch below 20nm | Jeffrey Junhao Xu, Da Yang, Kern Rim, Choh Fei Yeap | 2020-02-11 |
| 10439039 | Integrated circuits including a FinFET and a nanostructure FET | Jeffrey Junhao Xu, Kern Rim, Choh Fei Yeap | 2019-10-08 |
| 10418244 | Modified self-aligned quadruple patterning (SAQP) processes using cut pattern masks to fabricate integrated circuit (IC) cells with reduced area | Giridhar Nallapati, Periannan Chidambaram | 2019-09-17 |
| 10325979 | High density and reliable vertical natural capacitors | Junjing Bao, Jun Chen, Yangyang SUN, Giridhar Nallapati | 2019-06-18 |
| 10291211 | Adaptive pulse generation circuits for clocking pulse latches with minimum hold time | Seong-Ook Jung, Hanwool Jeong, Tae Woo Oh, Giridhar Nallapati, Periannan Chidambaram | 2019-05-14 |
| 10247617 | Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) | Lixin Ge, Periannan Chidambaram, Bin Yang, Jiefeng Lin, Giridhar Nallapati +3 more | 2019-04-02 |
| 10175571 | Hybrid coloring methodology for multi-pattern technology | Xiangdong Chen, Hyeokjin Lim, Ohsang Kwon, Mickael Malabry, Jingwei Zhang +5 more | 2019-01-08 |
| 10163792 | Semiconductor device having an airgap defined at least partially by a protective structure | John Jianhong Zhu, Jeffrey Junhao Xu, Choh Fei Yeap, Kern Rim | 2018-12-25 |
| 10157992 | Nanowire device with reduced parasitics | Mustafa Badaroglu, Vladimir Machkaoutsan, Jeffrey Junhao Xu, Matthew Michael Nowak, Choh Fei Yeap | 2018-12-18 |
| 10141317 | Metal layers for a three-port bit cell | Niladri Narayan Mojumder, Ritu Chaba, Ping-Lin Liu, Zhongze Wang, Choh Fei Yeap | 2018-11-27 |
| 10079293 | Semiconductor device having a gap defined therein | Jeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Mustafa Badaroglu, Vladimir Machkaoutsan +2 more | 2018-09-18 |
| 10043796 | Vertically stacked nanowire field effect transistors | Vladimir Machkaoutsan, Mustafa Badaroglu, John Jianhong Zhu, Junjing Bao, Jeffrey Junhao Xu +3 more | 2018-08-07 |
| 10037795 | Seven-transistor static random-access memory bitcell with reduced read disturbance | Seong-Ook Jung, Younghwi Yang, Zhongze Wang, Choh Fei Yeap | 2018-07-31 |
| 10032678 | Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices | Jeffrey Junhao Xu, Da Yang, Vladimir Machkaoutsan, Mustafa Badaroglu, Choh Fei Yeap | 2018-07-24 |
| 9984029 | Variable interconnect pitch for improved performance | Kern Rim, Xiangdong Chen, Raymond George Stephany, John Jianhong Zhu, Ohsang Kwon +2 more | 2018-05-29 |
| 9953979 | Contact wrap around structure | Jeffrey Junhao Xu, Vladimir Machkaoutsan, Mustafa Badaroglu, Junjing Bao, John Jianhong Zhu +2 more | 2018-04-24 |
| 9941154 | Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device | Choh Fei Yeap, Zhongze Wang, John Jianhong Zhu | 2018-04-10 |
| 9887209 | Standard cell architecture with M1 layer unidirectional routing | Mukul Gupta, Xiangdong Chen, Ohsang Kwon, Foua Vang, Kern Rim | 2018-02-06 |
| 9876017 | Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells | Niladri Narayan Mojumder, Zhongze Wang, Kern Rim, Choh Fei Yeap | 2018-01-23 |
| 9871121 | Semiconductor device having a gap defined therein | Jeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Mustafa Badaroglu, Vladimir Machkaoutsan +2 more | 2018-01-16 |
| 9859210 | Integrated circuits having reduced dimensions between components | Choh Fei Yeap, Da Yang | 2018-01-02 |
| 9853112 | Device and method to connect gate regions separated using a gate cut | Yanxiang Liu, Kern Rim | 2017-12-26 |
| 9824936 | Adjacent device isolation | Vladimir Machkaoutsan, Mustafa Badaroglu, Jeffrey Junhao Xu, Choh Fei Yeap | 2017-11-21 |
| 9812188 | Static random-access memory (SRAM) sensor for bias temperature instability | Niladri Narayan Mojumder, Zhongze Wang, Xiaonan Chen, Choh Fei Yeap | 2017-11-07 |
| 9806083 | Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods | Niladri Narayan Mojumder, Zhongze Wang, Kern Rim, Choh Fei Yeap | 2017-10-31 |