Issued Patents All Time
Showing 76–100 of 102 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9460777 | SRAM read buffer with reduced sensing delay and improved sensing margin | Seong-Ook Jung, Younghwi Yang, Zhongze Wang, Choh Fei Yeap | 2016-10-04 |
| 9455026 | Shared global read and write word lines | Niladri Narayan Mojumder, Zhongze Wang, Ping-Lin Liu, Kern Rim, Choh Fei Yeap | 2016-09-27 |
| 9424909 | Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation | Niladri Narayan Mojumder, Ping-Lin Liu, Zhongze Wang, Choh Fei Yeap | 2016-08-23 |
| 9396931 | Method of forming fins from different materials on a substrate | Zhongze Wang, Choh Fei Yeap | 2016-07-19 |
| 9379014 | Static random-access memory (SRAM) array | Niladri Narayan Mojumder, Choh Fei Yeap, Mosaddiq Saifuddin | 2016-06-28 |
| 9378803 | System and method to regulate operating voltage of a memory array | Zhongze Wang | 2016-06-28 |
| 9379058 | Grounding dummy gate in scaled layout design | Zhongze Wang, Ohsang Kwon, Kern Rim, John Jianhong Zhu, Xiangdong Chen +3 more | 2016-06-28 |
| 9349686 | Reduced height M1 metal lines for local on-chip routing | Choh Fei Yeap, Zhongze Wang, Niladri Narayan Mojumder, Mustafa Badaroglu | 2016-05-24 |
| 9336864 | Silicon germanium read port for a static random access memory register file | Niladri Narayan Mojumder, Zhongze Wang, Choh Fei Yeap | 2016-05-10 |
| 9336863 | Dual write wordline memory cell | Seong-Ook Jung, Younghwi Yang, Choh Fei Yeap, Zhongze Wang | 2016-05-10 |
| 9318564 | High density static random access memory array having advanced metal patterning | Niladri Narayan Mojumder, Zhongze Wang, Choh Fei Yeap | 2016-04-19 |
| 9257556 | Silicon germanium FinFET formation by Ge condensation | Jeffrey Junhao Xu, Vladimir Machkaoutsan, Kern Rim, Choh Fei Yeap | 2016-02-09 |
| 9257407 | Heterogeneous channel material integration into wafer | Choh Fei Yeap, Zhongze Wang, Niladri Narayan Mojumder | 2016-02-09 |
| 9252228 | Threshold voltage adjustment in metal oxide semiconductor field effect transistor with silicon oxynitride polysilicon gate stack on fully depleted silicon-on-insulator | Choh Fei Yeap | 2016-02-02 |
| 9245975 | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length | Kwan-Yong Lim, Amitabh Jain | 2016-01-26 |
| 9240404 | Embedded polysilicon resistor in integrated circuits formed by a replacement gate process | Kwan-Yong Lim, Ki-Don Lee | 2016-01-19 |
| 9196583 | Via material selection and processing | John Jianhong Zhu, Jeffrey Junhao Xu, Kern Rim, Zhongze Wang | 2015-11-24 |
| 9165929 | Complementarily strained FinFET structure | Kern Rim, Jeffrey Junhao Xu | 2015-10-20 |
| 9159576 | Method of forming finFET having fins of different height | — | 2015-10-13 |
| 9153587 | Fin-type semiconductor device | Xia Li, Bin Yang | 2015-10-06 |
| 8999792 | Fin-type semiconductor device | Xia Li, Bin Yang | 2015-04-07 |
| 8865549 | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length | Kwan-Yong Lim, Amitabh Jain | 2014-10-21 |
| 8865542 | Embedded polysilicon resistor in integrated circuits formed by a replacement gate process | Kwan-Yong Lim, Ki-Don Lee | 2014-10-21 |
| 8799847 | Methods for designing fin-based field effect transistors (FinFETS) | Zhongze Wang, Choh Fei Yeap | 2014-08-05 |
| 8489278 | Bicycle user interface system and method of operation thereof | Stephen R. Extance | 2013-07-16 |