Issued Patents All Time
Showing 51–75 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8077379 | Interferometric optical display system with broadband characteristics | Gang Xu, Marek Mienko | 2011-12-13 |
| 7978395 | Capacitive MEMS device with programmable offset voltage control | Daniel Felnhofer | 2011-07-12 |
| 7928514 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2011-04-19 |
| 7887711 | Method for etching chemically inert metal oxides | Douglas A. Buchanan, Eduard A. Cartier, Harald Okorn-Schmidt, Katherine L. Saenger | 2011-02-15 |
| 7858500 | Low threshold voltage semiconductor device with dual threshold voltage control means | Eduard A. Cartier, Matthew W. Copel, Martin M. Frank, Paul C. Jamison, Rajarao Jammy +2 more | 2010-12-28 |
| 7785999 | Formation of fully silicided metal gate using dual self-aligned silicide process | Cyril Cabral, Jr., Chester T. Dziobkowski, Sunfei Fang, Rajarao Jammy, Vijay Narayanan +4 more | 2010-08-31 |
| 7745278 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2010-06-29 |
| 7738158 | Electromechanical device treatment with water vapor | Bangalore R. Natarajan, Kasra Khazeni, David Heald, Rihui He, Sriram Akella | 2010-06-15 |
| 7737050 | Method of fabricating a nitrided silicon oxide gate dielectric layer | Edward D. Adams, Jay Burnham, James S. Nakos, Heather Elizabeth Preuss, Joseph F. Shepard, Jr. | 2010-06-15 |
| 7733552 | MEMS cavity-coating layers and methods | Ana R. Londergan, Bangalore R. Natarajan, James Randolph Webster, David Heald | 2010-06-08 |
| 7729036 | Capacitive MEMS device with programmable offset voltage control | Daniel Felnhofer | 2010-06-01 |
| 7688494 | Electrode and interconnect materials for MEMS devices | Gang Xu | 2010-03-30 |
| 7655994 | Low threshold voltage semiconductor device with dual threshold voltage control means | Eduard A. Cartier, Mathew W. Copel, Martin M. Frank, Paul C. Jamison, Rajarao Jammy +2 more | 2010-02-02 |
| 7643203 | Interferometric optical display system with broadband characteristics | Gang Xu, Marek Mienko | 2010-01-05 |
| 7566664 | Selective etching of MEMS using gaseous halides and reactive co-etchants | Xiaoming Yan, Brian W. Arbuckle, Ming-Hau Tung | 2009-07-28 |
| 7560361 | Method of forming gate stack for semiconductor electronic device | Martin M. Frank, Alexander Reznicek, Eduard A. Cartier | 2009-07-14 |
| 7479683 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2009-01-20 |
| 7452767 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2008-11-18 |
| 7369292 | Electrode and interconnect materials for MEMS devices | Gang Xu | 2008-05-06 |
| 7326610 | Process options of forming silicided metal gates for advanced CMOS devices | Ricky S. Amos, Douglas A. Buchanan, Cyril Cabral, Jr., Victor Ku, An Steegen | 2008-02-05 |
| 7271455 | Formation of fully silicided metal gate using dual self-aligned silicide process | Cyril Cabral, Jr., Chester T. Dziobkowski, Sunfei Fang, Rajarao Jammy, Vijay Narayanan +4 more | 2007-09-18 |
| 7242055 | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Supratik Guha +4 more | 2007-07-10 |
| 7235440 | Formation of ultra-thin oxide layers by self-limiting interfacial oxidation | David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more | 2007-06-26 |
| 7202186 | Method of forming uniform ultra-thin oxynitride layers | David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more | 2007-04-10 |
| 7169674 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier | Nestor A. Bojarczuk, Kevin K. Chan, Christopher P. D'Emic, Supratik Guha, Paul C. Jamison +1 more | 2007-01-30 |