Issued Patents All Time
Showing 76–90 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7105889 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2006-09-12 |
| 7078300 | Thin germanium oxynitride gate dielectric for germanium-based devices | Huiling Shang, Christopher P. D'Emic, Paul Kozlowski | 2006-07-18 |
| 7029966 | Process options of forming silicided metal gates for advanced CMOS devices | Ricky S. Amos, Douglas A. Buchanan, Cyril Cabral, Jr., Victor Ku, An Steegen | 2006-04-18 |
| 6958506 | High-dielectric constant insulators for feol capacitors | Harald Okorn-Schmidt, Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh | 2005-10-25 |
| 6891231 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier | Nestor A. Bojarczuk, Kevin K. Chan, Christopher P. D'Emic, Supratik Guha, Paul C. Jamison +1 more | 2005-05-10 |
| 6887797 | Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer | Douglas A. Buchanan, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp | 2005-05-03 |
| 6667207 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Harald Okorn-Schmidt | 2003-12-23 |
| 6642156 | Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics | Atul Ajmera, Christopher P. D'Emic | 2003-11-04 |
| 6573197 | Thermally stable poly-Si/high dielectric constant material interfaces | Alessandro C. Callegari, Michael A. Gribelyuk, Paul C. Jamison, Dianne L. Lacey | 2003-06-03 |
| 6511873 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Harald Okorn-Schmidt | 2003-01-28 |
| 6444592 | Interfacial oxidation process for high-k gate dielectric process integration | Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Kevin K. Chan, Matthew W. Copel +6 more | 2002-09-03 |
| 6436196 | Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer | Douglas A. Buchanan, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp | 2002-08-20 |
| 6395650 | Methods for forming metal oxide layers with enhanced purity | Alessandro C. Callegari, Fuad E. Doany, Theodore H. Zabel | 2002-05-28 |
| 6346487 | Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer | Douglas A. Buchanan, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp | 2002-02-12 |
| 6287897 | Gate dielectric with self forming diffusion barrier | Kai CK Chen, Asit Ray | 2001-09-11 |