Issued Patents All Time
Showing 51–75 of 292 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7038265 | Capacitor having tantalum oxynitride film and method for making same | Scott DeBoer, Husam N. Al-Shareef, Dan Gealy | 2006-05-02 |
| 7034353 | Methods for enhancing capacitors having roughened features to increase charge-storage capacity | Garry Mercaldi, Michael Nuttall, Shenlin Chen, Er-Xuan Ping | 2006-04-25 |
| 7009264 | Selective spacer to prevent metal oxide formation during polycide reoxidation | Klaus Schuegraf, Scott DeBoer | 2006-03-07 |
| 6974773 | High pressure anneals of integrated circuit structures | John K. Zahurak | 2005-12-13 |
| 6955996 | Method for stabilizing high pressure oxidation of a semiconductor device | Daniel Gealy, Dave Chapek, Scott DeBoer, Husam N. Al-Shareef | 2005-10-18 |
| 6930015 | Diffusion-enhanced crystallization of amorphous materials to improve surface roughness | Er-Xuan Ping | 2005-08-16 |
| 6927179 | Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby | Scott DeBoer | 2005-08-09 |
| 6927169 | Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing | Dan Maydan | 2005-08-09 |
| 6927445 | Method to form a corrugated structure for enhanced capacitance | Gordon A. Haller, Kirk D. Prall | 2005-08-09 |
| 6908803 | Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures | Klaus Schuegraf, Carl Marshall Eliot Powell | 2005-06-21 |
| 6887774 | Conductor layer nitridation | Yongjun Jeff Hu, Scott DeBoer | 2005-05-03 |
| 6884464 | Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber | Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin +4 more | 2005-04-26 |
| 6879044 | Structure for contact formation using a silicon-germanium alloy | — | 2005-04-12 |
| 6864561 | Method and apparatus for reducing fixed charge in semiconductor device layers | Ravi Iyer, Howard E. Rhodes | 2005-03-08 |
| 6864527 | Capacitor having tantalum oxynitride film and method for making same | Scott DeBoer, Husam N. Al-Shareef, Dan Gealy | 2005-03-08 |
| 6849544 | Forming a conductive structure in a semiconductor device | Ronald A. Weimer, Yongjun Jeff Hu, Pai-Hung Pan, Deepa Ratakonda, James A. Beck | 2005-02-01 |
| 6812530 | Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures | Klaus Schuegraf | 2004-11-02 |
| 6808758 | Pulse precursor deposition process for forming layers in semiconductor devices | — | 2004-10-26 |
| 6806572 | Structure for contact formation using a silicon-germanium alloy | — | 2004-10-19 |
| 6803297 | Optimal spike anneal ambient | Dean Jennings, Sairaju Tallavarjula | 2004-10-12 |
| 6797601 | Methods for forming wordlines, transistor gates, and conductive interconnects | Klaus Schuegraf | 2004-09-28 |
| 6798026 | Conductor layer nitridation | Yongjun Jeff Hu, Scott DeBoer | 2004-09-28 |
| 6794703 | High pressure reoxidation/anneal of high dielectric constant | Scott DeBoer | 2004-09-21 |
| 6787482 | Method to form a DRAM capacitor using low temperature reoxidation | Brett Rolfson | 2004-09-07 |
| 6784052 | Method of forming a capacitor with two diffusion barrier layers formed in the same step | Klaus Schuegraf | 2004-08-31 |