Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6919260 | Method of manufacturing a substrate having shallow trench isolation | Kaori Umezawa, Norihiko Tsuchiya, Hiroyuki Kamijou, Atsushi Yagishita, Tsunehiro KITA | 2005-07-19 |
| 6521293 | Method for producing a ceramic-coated blade of gas turbine | Yoshitaka Kojima, Hideyuki Arikawa, Mitsuo Haginoya, Katsuo Wada, Ryuta Watanabe +1 more | 2003-02-18 |
| 6042951 | Ceramic-coated blade of gas turbine and method of producing same | Yoshitaka Kojima, Hideyuki Arikawa, Mitsuo Haginoya, Katsuo Wada, Ryuta Watanabe +1 more | 2000-03-28 |
| 6008110 | Semiconductor substrate and method of manufacturing same | Shuichi Samata, Yoko Inoue | 1999-12-28 |
| 5994756 | Substrate having shallow trench isolation | Kaori Umezawa, Norihiko Tsuchiya, Hiroyuki Kamijou, Atsushi Yagishita, Tsunehiro KITA | 1999-11-30 |
| 5897916 | Process for production of coated ceramic member | Hiromichi Kobayashi, Tomonori Takahashi, Yutaka Furuse | 1999-04-27 |
| 5739575 | Dielectrically isolated substrate and method for manufacturing the same | Masanori Numano, Norihiko Tsuchiya, Hiroyasu Kubota, Yoshiki Hayashi, Yukihiro Ushiku +4 more | 1998-04-14 |
| 5698869 | Insulated-gate transistor having narrow-bandgap-source | Makoto Yoshimi, Satoshi Inaba, Atsushi Murakoshi, Mamoru Terauchi, Naoyuki Shigyo +8 more | 1997-12-16 |
| 5683824 | Coated ceramic member and process for production thereof | Hiromichi Kobayashi, Tomonori Takahashi, Yutaka Furuse | 1997-11-04 |
| 5675176 | Semiconductor device and a method for manufacturing the same | Yukihiro Ushiku, Atsushi Yagishita, Satoshi Inaba, Minoru Takahashi, Masanori Numano +4 more | 1997-10-07 |
| 5574307 | Semiconductor device and method of producing the same | Mokuji Kageyama | 1996-11-12 |
| 5514904 | Semiconductor device with monocrystalline gate insulating film | Shinji Onga, Takako Okada, Kouichirou Inoue, Kikuo Yamabe, Hiroaki Hazama +1 more | 1996-05-07 |
| 5246500 | Vapor phase epitaxial growth apparatus | Shuichi Samata | 1993-09-21 |
| 5220191 | Semiconductor device having a well electrically insulated from the substrate | — | 1993-06-15 |
| 5148457 | System for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of X-rays fluorescence | Atsuko Kubota, Norihiko Tsuchiya, Shuichi Samata, Mokuji Kageyama | 1992-09-15 |
| 5124276 | Filling contact hole with selectively deposited EPI and poly silicon | Shuichi Samata | 1992-06-23 |
| 5116780 | Method of manufacturing a semiconductor device having improved contact resistance characteristics | Shuichi Samata | 1992-05-26 |
| 5071776 | Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface | Moriya Miyashita, Makiko Wakatsuki, Norihiko Tsuchiya, Atsuko Kubota | 1991-12-10 |
| 5057899 | Semiconductor device with improved wiring contact portion | Shuichi Samata | 1991-10-15 |
| 5004702 | Preparation method of selective growth silicon layer doped with impurities | Shuichi Samata | 1991-04-02 |
| 4894206 | Crystal pulling apparatus | Youji Yamashita, Masakatu Kojima, Masanobu Ogino | 1990-01-16 |
| 4894349 | Two step vapor-phase epitaxial growth process for control of autodoping | Yoshihiko Saito | 1990-01-16 |
| 4885257 | Gettering process with multi-step annealing and inert ion implantation | — | 1989-12-05 |
| 4862000 | Method for predicting density of micro crystal defects in semiconductor element from silicon wafer used in the manufacture of the element, and infrared absorption measurement apparatus for this method | Atsuko Kubota, Yoshiaki Ohwada | 1989-08-29 |
| 4837610 | Insulation film for a semiconductor device | Hachiro Hiratsuka, Shintaro Yoshii | 1989-06-06 |