Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8034179 | Method for insulating film formation, storage medium from which information is readable with computer, and processing system | Yoshiro Kabe, Junichi Kitagawa | 2011-10-11 |
| 8026187 | Method of forming silicon oxide film and method of production of semiconductor memory device using this method | Yoshiro Kabe, Junichi Kitagawa | 2011-09-27 |
| 6185472 | Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator | Shinji Onga, Takako Okada, Hiroshi Tomita, Haruo Okano | 2001-02-06 |
| 5885905 | Semiconductor substrate and method of processing the same | Souichi Nadahara, Hideyuki Kobayashi, Kunihiro Terasaka, Akihito Yamamoto, Naohiko Yasuhisa | 1999-03-23 |
| 5757063 | Semiconductor device having an extrinsic gettering film | Hiroshi Tomita, Mami Takahashi | 1998-05-26 |
| 5698891 | Semiconductor device and method for manufacturing the same | Hiroshi Tomita, Mami Saito | 1997-12-16 |
| 5543334 | Method of screening semiconductor device | Ichiro Yoshii, Hiroyuki Kamijoh, Yoshio Ozawa, Kazuhiko Hashimoto, Katsuya Okumura +1 more | 1996-08-06 |
| 5514904 | Semiconductor device with monocrystalline gate insulating film | Shinji Onga, Takako Okada, Kouichirou Inoue, Yoshiaki Matsushita, Hiroaki Hazama +1 more | 1996-05-07 |
| 5502010 | Method for heat treating a semiconductor substrate to reduce defects | Souichi Nadahara, Hideyuki Kobayashi, Kunihiro Terasaka, Akihito Yamamoto, Naohiko Yasuhisa | 1996-03-26 |
| 5489542 | Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved | Hiroshi Iwai, Toyota Morimoto, Hisayo Momose, Yoshio Ozawa | 1996-02-06 |
| 5431561 | Method and apparatus for heat treating | Keitaro Imai, Katsuya Okumura, Ken Nakao, Seikou Ueno | 1995-07-11 |
| 5360748 | Method of manufacturing a semiconductor device | Soichi Nadahara | 1994-11-01 |
| 5354710 | Method of manufacturing semiconductor devices using an adsorption enhancement layer | Hideichi Kawaguchi, Yoshitaka Tsunashima, Katsuya Okumura | 1994-10-11 |
| 5297956 | Method and apparatus for heat treating | Keitaro Imai, Katsuya Okumura, Ken Nakao, Seikou Ueno | 1994-03-29 |
| 5259883 | Method of thermally processing semiconductor wafers and an apparatus therefor | Katsuya Okumura | 1993-11-09 |
| 5239614 | Substrate heating method utilizing heating element control to achieve horizontal temperature gradient | Seiko Ueno, Ken Nakao, Keitaro Imai | 1993-08-24 |
| 5237188 | Semiconductor device with nitrided gate insulating film | Hiroshi Iwai, Toyota Morimoto, Hisayo Momose, Yoshio Ozawa | 1993-08-17 |
| 5189503 | High dielectric capacitor having low current leakage | Kyoichi Suguro, Keitaro Imai, Mitsutoshi Koyama | 1993-02-23 |
| 5173440 | Method of fabricating a semiconductor device by reducing the impurities | Yoshitaka Tsunashima, Kenji Todori | 1992-12-22 |
| 5073813 | Semiconductor device having buried element isolation region | Shigeru Morita, Masakazu Kakumu | 1991-12-17 |
| 4735824 | Method of manufacturing an MOS capacitor | Keitaro Imai | 1988-04-05 |