Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8533549 | Memory system and computer system | Shigeo Kondo, Kiyomi Naruke | 2013-09-10 |
| 8503245 | Non-volatile semiconductor memory device and a programming method thereof | Kunihiro Yamada, Michiru Hogyoku, Hideto Horii | 2013-08-06 |
| 8369152 | Semiconductor memory device including charge accumulation layer | Takeshi Shimane, Mutsuo Morikado | 2013-02-05 |
| 7999324 | Semiconductor device including overcurrent protection element | Kentaro Watanabe | 2011-08-16 |
| 7823114 | Method of designing wiring structure of semiconductor device and wiring structure designed accordingly | Tetsuya Yamaguchi | 2010-10-26 |
| 7373627 | Method of designing wiring structure of semiconductor device and wiring structure designed accordingly | Tetsuya Yamaguchi | 2008-05-13 |
| 6978434 | Method of designing wiring structure of semiconductor device and wiring structure designed accordingly | Tetsuya Yamaguchi | 2005-12-20 |
| 6956747 | Semiconductor device | Takayuki Hiraoka, Kentaro Watanabe | 2005-10-18 |
| 6222224 | Erasable and programmable nonvolatile semiconductor memory, semiconductor integrated circuit device having the semiconductor memory and method of manufacturing the semiconductor memory | — | 2001-04-24 |
| 6195790 | Electrical parameter evaluation system, electrical parameter evaluation method, and computer-readable recording medium for recording electrical parameter evaluation program | Hiroyoshi Tanimoto, Toshiyuki Enda, Kazuya Matsuzawa | 2001-02-27 |
| 6051452 | Method for manufacturing a semiconductor device with ion implantation | Toshiyuki Enda | 2000-04-18 |
| 5760442 | Semiconductor device of a silicon on insulator metal-insulator type with a concave feature | Toshiyuki Enda | 1998-06-02 |
| 5698869 | Insulated-gate transistor having narrow-bandgap-source | Makoto Yoshimi, Satoshi Inaba, Atsushi Murakoshi, Mamoru Terauchi, Yoshiaki Matsushita +8 more | 1997-12-16 |
| 5485028 | Semiconductor device having a single crystal semiconductor layer formed on an insulating film | Minoru Takahashi, Makoto Yoshimi | 1996-01-16 |
| 5463234 | High-speed semiconductor gain memory cell with minimal area occupancy | Akira Toriumi, Tetsunori Wada, Hiroyoshi Tanimoto, Kazuya Ohuchi, Makoto Yoshimi | 1995-10-31 |
| 5254867 | Semiconductor devices having an improved gate | Sanae Fukuda | 1993-10-19 |
| 4941114 | Triangular mesh generation method | Koichi Sato | 1990-07-10 |
| 4651411 | Method of manufacturing a MOS device wherein an insulating film is deposited in a field region | Masami Konaka, Ryo Dang | 1987-03-24 |
| 4636824 | Voltage-controlled type semiconductor switching device | Toshiaki Ikoma, Hajime Maeda, Hisayoshi Yanai, Ryo Dang | 1987-01-13 |