AT

Akira Toriumi

KT Kabushiki Kaisha Toshiba: 11 patents #2,779 of 21,451Top 15%
JA Japan Science And Technology Agency: 8 patents #34 of 2,171Top 2%
RT Renesas Technology: 3 patents #990 of 3,337Top 30%
TT The University Of Tokyo: 1 patents #1,000 of 2,633Top 40%
Rohm Co.: 1 patents #1,438 of 2,292Top 65%
SC Sanyo Electric Co.: 1 patents #3,644 of 6,347Top 60%
HO Horiba: 1 patents #319 of 604Top 55%
Overall (All Time): #170,709 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Showing 1–24 of 24 patents

Patent #TitleCo-InventorsDate
12095348 Current sensor and power conversion circuit Takeaki Yajima 2024-09-17
11157805 Neuron circuit, system, and switch circuit Takeaki Yajima 2021-10-26
10748776 Semiconductor device including contact structure Tomonori Nishimura 2020-08-18
10109710 Semiconductor device having germanium layer as channel region and method for manufacturing the same Choong-Hyun Lee, Tomonori Nishimura 2018-10-23
9722026 Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure Toshiyuki Tabata, Choong-Hyun Lee, Tomonori Nishimura, Cimang LU 2017-08-01
9691620 Semiconductor structure having film including germanium oxide on germanium layer and method of fabricating the same Choong-Hyun Lee 2017-06-27
9647074 Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated Choong-Hyun Lee, Tomonori Nishimura 2017-05-09
9306026 Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same Toshiyuki Tabata 2016-04-05
8063452 Semiconductor device and method for manufacturing the same Koji Kita, Kazuyuki Tomida, Yoshiki Yamamoto 2011-11-22
7671426 Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film Nobuyuki Mise 2010-03-02
7507632 Semiconductor device and manufacturing method thereof Nobuyuki Mise 2009-03-24
7397094 Semiconductor device and manufacturing method thereof Toshihide Nabatame, Tsuyoshi Horikawa, Kunihiko Iwamoto, Koji Tominaga 2008-07-08
7102203 Semiconductor device including field-effect transistor Hideaki Fujiwara 2006-09-05
6690030 Semiconductor device with negative differential resistance characteristics Junji Koga, Ken Uchida, Ryuji Ohba 2004-02-10
6642575 MOS transistor with vertical columnar structure Mizuki Ono 2003-11-04
6320220 Quantum tunneling effect device and semiconductor composite substrate Hiroshi Watanabe, Naoki Yasuda, Tomoharu Tanaka, Toru Tanzawa 2001-11-20
6208002 Field effect transistor and manufacturing method thereof Hideki Satake 2001-03-27
6191463 Apparatus and method of improving an insulating film on a semiconductor device Yuichiro Mitani, Hideki Satake 2001-02-20
6111288 Quantum tunneling effect device and semiconductor composite substrate Hiroshi Watanabe, Naoki Yasuda, Tomoharu Tanaka, Toru Tanzawa 2000-08-29
6060748 Semiconductor integrated circuit device using a silicon-on-insulator substrate Ken Uchida, Akiko Ohata, Junji Koga 2000-05-09
5963471 Semiconductor device Akiko Ohata 1999-10-05
5754077 Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET Akiko Ohata 1998-05-19
5679961 Correlation tunnel device Hitoshi Higurashi, Fumiko Yamaguchi, Kiyoshi Kawamura, Alfred W. Hübler 1997-10-21
5463234 High-speed semiconductor gain memory cell with minimal area occupancy Naoyuki Shigyo, Tetsunori Wada, Hiroyoshi Tanimoto, Kazuya Ohuchi, Makoto Yoshimi 1995-10-31