KO

Kazuya Ohuchi

KT Kabushiki Kaisha Toshiba: 20 patents #1,460 of 21,451Top 7%
Overall (All Time): #225,089 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
7902612 Semiconductor device and method of manufacturing the same Takashi Yamauchi, Atsuhiro Kinoshita, Yoshinori Tsuchiya, Junji Koga, Koichi Kato +1 more 2011-03-08
7875976 Semiconductor device including a silicide layer and a dielectric layer Makoto Wada, Takamasa Usui 2011-01-25
7456096 Method of manufacturing silicide layer for semiconductor device Takashi Yamauchi, Atsuhiro Kinoshita, Yoshinori Tsuchiya, Junji Koga, Koichi Kato +1 more 2008-11-25
7183168 Method of manufacturing a semiconductor device having a silicide film Satoshi Matsuda 2007-02-27
7148096 Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germanium 2006-12-12
7141467 Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the same Akira Hokazono 2006-11-28
6897534 Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same Atsushi Azuma 2005-05-24
6891232 Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same Kiyotaka Miyano, Ichiro Mizushima 2005-05-10
6878579 Semiconductor device and method of manufacturing the same Hironobu Fukui 2005-04-12
6841429 Method of manufacturing a semiconductor device having a silicide film Satoshi Matsuda 2005-01-11
6791106 Semiconductor device and method of manufacturing the same Hironobu Fukui 2004-09-14
6762468 Semiconductor device and method of manufacturing the same 2004-07-13
6744104 Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same Nobutoshi Aoki, Ichiro Mizushima 2004-06-01
6677660 Semiconductor device having silicide film Satoshi Matsuda 2004-01-13
6642585 Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same Atsushi Azuma 2003-11-04
6525403 Semiconductor device having MIS field effect transistors or three-dimensional structure Satoshi Inaba 2003-02-25
6498374 MOS semiconductor device having gate insulating film containing nitrogen 2002-12-24
5917223 Semiconductor device having salicide layer Hideki Shibata 1999-06-29
5734181 Semiconductor device and manufacturing method therefor Ryuji Ohba, Tomohisa Mizuno, Makoto Yoshimi 1998-03-31
5463234 High-speed semiconductor gain memory cell with minimal area occupancy Akira Toriumi, Naoyuki Shigyo, Tetsunori Wada, Hiroyoshi Tanimoto, Makoto Yoshimi 1995-10-31