Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8941092 | Method for forming semiconductor device structure and semiconductor device | — | 2015-01-27 |
| 7659537 | Field effect transistor | Tsutomu Tezuka, Shinichi Takagi | 2010-02-09 |
| 7009200 | Field effect transistor | Tsutomu Tezuka, Shinichi Takagi | 2006-03-07 |
| 6917096 | Semiconductor device and method of manufacturing substrate | Naoharu Sugiyama, Atsushi Kurobe, Tsutomu Tezuka, Shinichi Takagi | 2005-07-12 |
| 6774390 | Semiconductor device | Naoharu Sugiyama, Tsutomu Tezuka, Shinichi Takagi | 2004-08-10 |
| 6709909 | Semiconductor device and method of manufacturing the same | Naoharu Sugiyama, Shinichi Takagi | 2004-03-23 |
| 6607948 | Method of manufacturing a substrate using an SiGe layer | Naoharu Sugiyama, Atsushi Kurobe, Tsutomu Tezuka, Shinichi Takagi | 2003-08-19 |
| 6583437 | Semiconductor device and method of manufacturing the same | Naoharu Sugiyama, Shinichi Takagi | 2003-06-24 |
| 6509587 | Semiconductor device | Naoharu Sugiyama, Tsutomu Tezuka, Shinichi Takagi | 2003-01-21 |
| 6326667 | Semiconductor devices and methods for producing semiconductor devices | Naoharu Sugiyama, Shinichi Takagi, Atsushi Kurobe | 2001-12-04 |
| 5844278 | Semiconductor device having a projecting element region | Yukihiro Ushiku, Makoto Yoshimi, Mamoru Terauchi, Shigeru Kawanaka | 1998-12-01 |
| 5734181 | Semiconductor device and manufacturing method therefor | Ryuji Ohba, Makoto Yoshimi, Kazuya Ohuchi | 1998-03-31 |
| 5698883 | MOS field effect transistor and method for manufacturing the same | — | 1997-12-16 |
| 5696401 | Semiconductor device and method of fabricating the same | Yoshiaki Asao | 1997-12-09 |
| 5430313 | Transistor with an offset gate structure | Jumpei Kumagai | 1995-07-04 |
| 5302845 | Transistor with an offset gate structure | Jumpei Kumagai | 1994-04-12 |
| 5302844 | Semiconductor device and method for manufacturing the same | Shizuo Sawada | 1994-04-12 |
| 5216271 | BiCMOS device with low bandgap CMOS contact regions and low bandgap bipolar base region | Shinichi Takagi | 1993-06-01 |
| 5185646 | Semiconductor device with improved current drivability | — | 1993-02-09 |
| 5119152 | MOS semiconductor device having LDD structure | — | 1992-06-02 |